Advanced Planar Technology

AUTOMOTIVE GRADE Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design

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INFINEON

英飞凌

Advanced Planar Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

文件：4.78457 Mbytes 页数：10 Pages

KERSEMI

Advanced Planar Technology Low On-Resistance

文件：244.23 Kbytes 页数：12 Pages

IRF

HEXFET® Power MOSFET

AUTOMOTIVE GRADEDescription\nSpecifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that ● Advanced Planar Technology\n● Low On-Resistance\n● Dynamic dV/dT Rating\n● 175°C Operating Temperature\n● Fast Switching\n● Fully Avalanche Rated\n● Repetitive Avalanche Allowed up to Tjmax\n● Lead-Free, RoHS Compliant\n● Automotive Qualified *;

Infineon

英飞凌

AUTOMOTIVE GRADE

Description Specifically designed for Automotive applications, thi MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive

文件：4.67522 Mbytes 页数：12 Pages

KERSEMI

HEXFET짰 Power MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

文件：323.57 Kbytes 页数：14 Pages

IRF

AUTOMOTIVE GRADE

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

文件：726.28 Kbytes 页数：12 Pages

INFINEON

英飞凌

HEXFET짰 Power MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

文件：323.57 Kbytes 页数：14 Pages

IRF

AUTOMOTIVE GRADE

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

文件：726.28 Kbytes 页数：12 Pages

INFINEON

英飞凌

HEXFET짰 Power MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

文件：323.57 Kbytes 页数：14 Pages

IRF