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AUIRFR4105中文资料HEXFET® Power MOSFET数据手册Infineon规格书
AUIRFR4105规格书详情
描述 Description
AUTOMOTIVE GRADEDescription
Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.
特性 Features
● Advanced Planar Technology
● Low On-Resistance
● Dynamic dV/dT Rating
● 175°C Operating Temperature
● Fast Switching
● Fully Avalanche Rated
● Repetitive Avalanche Allowed up to Tjmax
● Lead-Free, RoHS Compliant
● Automotive Qualified *
技术参数
- 型号：
AUIRFR4105
- 功能描述：
MOSFET AUTO 55V 1 N-CH HEXFET 45mOhms
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
NA/ |
33760 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
IR |
22+ |
SOT252 |
100000 |
代理渠道/只做原装/可含税 |
询价 | ||
VB |
25+ |
TO-252 |
5000 |
原装正品,欢迎来电咨询! |
询价 | ||
IR |
18+ |
SOT252 |
375 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
IR |
21+ |
SOT252 |
375 |
原装现货假一赔十 |
询价 | ||
Infineon Technologies |
22+ |
TO2523 DPak (2 Leads + Tab) SC |
9000 |
原厂渠道,现货配单 |
询价 | ||
IR |
20+ |
TO-252 |
36900 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
Infineon/英飞凌 |
23+ |
DPAK |
12700 |
买原装认准中赛美 |
询价 | ||
Infineon/英飞凌 |
24+ |
DPAK |
25000 |
原装正品,假一赔十! |
询价 | ||
NK/南科功率 |
2025+ |
TO-252 |
986966 |
国产 |
询价 |
