Advanced Planar Technology Low On-Resistance

V(BR)DSS 55V RDS(on) max. 75mΩ ID 2.8A Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on resistance per silicon area. This benefit combined with the fast switching s

文件：190.25 Kbytes 页数：11 Pages

IRF

Low On-Resistance

文件：213.71 Kbytes 页数：11 Pages

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Advanced Planar Technology Low On-Resistance

V(BR)DSS 55V RDS(on) max. 75mΩ ID 2.8A Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on resistance per silicon area. This benefit combined with the fast switching s

文件：190.25 Kbytes 页数：11 Pages

IRF

汽车Q101 55V 单个 N 通道 HEXFET Power MOSFET, 采用 SOT-223 封装

\n优势:\n• 先进平面工艺\n• 动态的dv/dt额定值\n• 175°C 的工作温度\n• 快速开关\n• 完全雪崩额定值\n• 允许重复雪崩达到 Tjmax\n• 无铅，符合 RoHS\n• 通过汽车认证;

Infineon

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