AUTOMOTIVE GRADE

Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power

文件：329.92 Kbytes 页数：11 Pages

INFINEON

英飞凌

Advanced Planar Technology Low On-Resistance

Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power

文件：264.53 Kbytes 页数：13 Pages

IRF

Advanced Planar Technology Low On-Resistance

Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power

文件：264.53 Kbytes 页数：13 Pages

IRF

AUTOMOTIVE GRADE

Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power

文件：329.92 Kbytes 页数：11 Pages

INFINEON

英飞凌

汽车 Q101 30V 双 N 通道和 P 通道 HEXFET Power MOSFET，采用 SO-8 封装

\n优势:\n• 先进平面工艺\n• 动态的dv/dt额定值\n• 175°C 的工作温度\n• 快速开关\n• 完全雪崩额定值\n• 允许重复雪崩达到 Tjmax\n• 无铅，符合 RoHS\n• 通过汽车认证;

Infineon

英飞凌