功率放大器

• Frequency 2.1GHz to 2.2GHz\n• High Peak Power – 37.5dBm\n• High Efficiency – 33%\n• Instantaneous Bandwidths up to 60MHz\n• Single Supply Domain +5V • Telecom Market \n• FDD or TDD systems\n• Point-to-point infrastructure\n• General purpose RF;

Aurasemi

奥拉半导体

High voltage high and low-side 2 A gate driver

Features  Transient withstand voltage 600 V  dV/dt immunity ± 50 V/ns in full temperature range  Driver current capability: – 2 A source typ. at 25 °C – 2.5 A sink typ. at 25 °C  Short propagation delay: 85 ns  Switching times 25 ns rise/fall with 1 nF load  Integrated bootstrap dio

文件：451.51 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

High voltage high and low-side 2 A gate driver

Features  Transient withstand voltage 600 V  dV/dt immunity ± 50 V/ns in full temperature range  Driver current capability: – 2 A source typ. at 25 °C – 2.5 A sink typ. at 25 °C  Short propagation delay: 85 ns  Switching times 25 ns rise/fall with 1 nF load  Integrated bootstrap dio

文件：451.51 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

High voltage high and low-side 2 A gate driver

Features  Transient withstand voltage 600 V  dV/dt immunity ± 50 V/ns in full temperature range  Driver current capability: – 2 A source typ. at 25 °C – 2.5 A sink typ. at 25 °C  Short propagation delay: 85 ns  Switching times 25 ns rise/fall with 1 nF load  Integrated bootstrap dio

文件：451.51 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体