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ATF-10136-STR

0.5-12 GHz Low Noise Gallium Arsenide FET

Description The ATF-10136 is a high performance gallium arsenide Schottky-barrier gate field effect transistor housed in a cost effective microstrip package. Its premium noise figure makes this device appropriate for use in the first stage of low noise amplifiers operat ing in the 0.5-12 GHz fr

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ATF-10136-TR1

0.5-12 GHz Low Noise Gallium Arsenide FET

Description The ATF-10136 is a high performance gallium arsenide Schottky-barrier gate field effect transistor housed in a cost effective microstrip package. Its premium noise figure makes this device appropriate for use in the first stage of low noise amplifiers operat ing in the 0.5-12 GHz fr

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ATF-10236

0.5-12 GHz Low Noise Gallium Arsenide FET

Description The ATF-10236 is a high performance gallium arsenide Schottky-barrier-gate field effect transistor housed in a cost effective microstrip package. Its low noise figure makes this device appropriate for use in the first and second stages of low noise amplifiers operating in the 0.5-12 G

文件:47.09 Kbytes 页数:3 Pages

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ATF-10236-STR

0.5-12 GHz Low Noise Gallium Arsenide FET

Description The ATF-10236 is a high performance gallium arsenide Schottky-barrier-gate field effect transistor housed in a cost effective microstrip package. Its low noise figure makes this device appropriate for use in the first and second stages of low noise amplifiers operating in the 0.5-12 G

文件:47.09 Kbytes 页数:3 Pages

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ATF-10236-TR1

0.5-12 GHz Low Noise Gallium Arsenide FET

Description The ATF-10236 is a high performance gallium arsenide Schottky-barrier-gate field effect transistor housed in a cost effective microstrip package. Its low noise figure makes this device appropriate for use in the first and second stages of low noise amplifiers operating in the 0.5-12 G

文件:47.09 Kbytes 页数:3 Pages

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ATF-13100

2-18 GHz Low Noise Gallium Arsenide FET

Description The ATF-13100 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor chip. This device is designed for use in low noise, wideband amplifier and oscillator applications in the 2-18␣ GHz frequency range. Features • Low Noise Figure: 1.1 dB Typical at 12 GH

文件:43.09 Kbytes 页数:3 Pages

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ATF-13100-GP3

2-18 GHz Low Noise Gallium Arsenide FET

Description The ATF-13100 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor chip. This device is designed for use in low noise, wideband amplifier and oscillator applications in the 2-18␣ GHz frequency range. Features • Low Noise Figure: 1.1 dB Typical at 12 GH

文件:43.09 Kbytes 页数:3 Pages

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ATF13284

1-16 GHz Low Noise Gallium Arsenide FET

1-16 Ghz Low Noise Gallium Arsenide FET

文件:132.13 Kbytes 页数:2 Pages

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ATF-13284

1-16 GHz Low Noise Gallium Arsenide FET

1-16 Ghz Low Noise Gallium Arsenide FET

文件:132.13 Kbytes 页数:2 Pages

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ATF13284STR

1-16 GHz Low Noise Gallium Arsenide FET

1-16 Ghz Low Noise Gallium Arsenide FET

文件:132.13 Kbytes 页数:2 Pages

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产品属性

  • 产品编号:

    TPS79733DCKR

  • 制造商:

    Texas Instruments

  • 类别:

    集成电路(IC) > 线性 + 开关稳压器

  • 包装:

    卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带

  • 输出配置:

  • 输出类型:

    固定

  • 电压 - 输入(最大值):

    5.5V

  • 电压 - 输出(最小值/固定):

    3.3V

  • 电压降(最大值):

    0.2V @ 10mA

  • 电流 - 输出:

    50mA

  • PSRR:

    50dB(100Hz)

  • 控制特性:

    电源良好

  • 保护功能:

    过流,反极性

  • 工作温度:

    -40°C ~ 85°C

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    5-TSSOP,SC-70-5,SOT-353

  • 供应商器件封装:

    SC-70-5

  • 描述:

    IC REG LINEAR 3.3V 50MA SC70-5

供应商型号品牌批号封装库存备注价格
TI/德州仪器
25+
SC70-5
20300
TI/德州仪器原装特价TPS79733DCKR即刻询购立享优惠#长期有货
询价
Texas Instruments
24+
SC70-5
12000
原装正品现货询价有惊喜
询价
TI/德州仪器
2152+
SC70-5
8000
原装正品现货假一罚十
询价
Texas Instruments
25+
SC70
18000
TI优势渠道,大量原装库存现货,交期快,欢迎询价。
询价
TI(德州仪器)
2022+原装正品
SC70-5
18000
支持工厂BOM表配单 公司只做原装正品货
询价
TI/BB
2023+
3000
绝对全新原装,现货热卖
询价
TI
2021+
SC70
6800
原厂原装,欢迎咨询
询价
TI/BB
2024+
1200
绝对全新原装,现货热卖
询价
TI(德州仪器)
24+
SC70-5
10048
原厂可订货,技术支持,直接渠道。可签保供合同
询价
TI
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
询价
更多ATF供应商 更新时间2025-12-25 11:38:00