0.5-12 GHz Low Noise Gallium Arsenide FET

Description The ATF-10136 is a high performance gallium arsenide Schottky-barrier gate field effect transistor housed in a cost effective microstrip package. Its premium noise figure makes this device appropriate for use in the first stage of low noise amplifiers operat ing in the 0.5-12 GHz fr

文件：46.87 Kbytes 页数：3 Pages

HP

安捷伦

0.5 – 12 GHz Low Noise Gallium Arsenide FET

Description\nThe ATF-10136 is a high performance gallium arsenide Schottky-barrier gate field effect transistor housed in a cost effective microstrip package. Its premium noise figure makes this device appropriate for use in the first stage of low noise amplifiers operat ing in the 0.5-12 GHz freque • Low Noise Figure: 0.5 dB Typical at 4 GHz\n• Low Bias:  VDS= 2 V, IDS␣ =␣ 20 mA\n• High Associated Gain:  13.0 dB Typical at 4 GHz\n• High Output Power:   20.0 dBm Typical P1 dB at 4 GHz\n• Cost Effective Ceramic Microstrip Package\n• Tape-and Reel Packaging Option Available[1];

Agilent

安捷伦

ASSEMBLY INSTRUCTIONS FOR EN4SD, EN4TD, EN4SDSS, EN4DSC, ST, CN4SB, CN4ST & EN4DH

文件：68.86 Kbytes 页数：1 Pages

HAMMONDHammond Manufacturing Company Limited

哈蒙德哈蒙德制造有限公司

ADSL Transformer SMD Type: CEP >Series>

◆ Product Description • 17.7× 13.5mm Max.(L× W),12.3mm Max. Height. ◆ Feature • xDSL line transformer. • Ideally used in ADSL customer premises equipment, SHDSL&HDSL, splitter and VDSL. • Approved by TI, Silicon Labs, Broadcom and Conexant. • RoHS Compliance.

文件：152.38 Kbytes 页数：2 Pages

SUMIDA

胜美达

Universal Hexadecimal Counter

文件：138.32 Kbytes 页数：8 Pages

ONSEMI

安森美半导体