0.5-12 GHz Low Noise Gallium Arsenide FET

Description The ATF-10236 is a high performance gallium arsenide Schottky-barrier-gate field effect transistor housed in a cost effective microstrip package. Its low noise figure makes this device appropriate for use in the first and second stages of low noise amplifiers operating in the 0.5-12 G

文件：47.09 Kbytes 页数：3 Pages

HP

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0.5-12 GHz Low Noise Gallium Arsenide FET

Agilent

安捷伦

0.5-12 GHz Low Noise Gallium Arsenide FET

Description The ATF-10236 is a high performance gallium arsenide Schottky-barrier-gate field effect transistor housed in a cost effective microstrip package. Its low noise figure makes this device appropriate for use in the first and second stages of low noise amplifiers operating in the 0.5-12 G

文件：47.09 Kbytes 页数：3 Pages

HP

安捷伦

0.5-12 GHz Low Noise Gallium Arsenide FET

Description The ATF-10236 is a high performance gallium arsenide Schottky-barrier-gate field effect transistor housed in a cost effective microstrip package. Its low noise figure makes this device appropriate for use in the first and second stages of low noise amplifiers operating in the 0.5-12 G

文件：47.09 Kbytes 页数：3 Pages

HP

安捷伦