2110–2170 MHz, 18 W AVG., 28 V AIRFAST RF POWER LDMOS TRANSISTOR

Features  Advanced High Performance In- Package Doherty  Greater Negative Gate- Source Voltage Range for Improved Class C Operation  Designed for Digital Predistortion Error Correction Systems

文件：438.23 Kbytes 页数：16 Pages

恩XP

1800–2200 MHz, 32 W AVG., 48 V AIRFAST RF POWER GaN TRANSISTOR

Features  High Terminal Impedances for Optimal Broadband Performance  Designed for Digital Predistortion Error Correction Systems  Optimized for Doherty Applications

文件：761.3 Kbytes 页数：18 Pages

恩XP

1800–2200 MHz, 32 W AVG., 48 V AIRFAST RF POWER GaN TRANSISTOR

Features  High Terminal Impedances for Optimal Broadband Performance  Designed for Digital Predistortion Error Correction Systems  Optimized for Doherty Applications

文件：761.3 Kbytes 页数：18 Pages

恩XP

2110–2170 MHz, 18 W AVG., 28 V AIRFAST RF POWER LDMOS TRANSISTOR

Features  Advanced High Performance In- Package Doherty  Greater Negative Gate- Source Voltage Range for Improved Class C Operation  Designed for Digital Predistortion Error Correction Systems

文件：438.23 Kbytes 页数：16 Pages

恩XP

N--Channel Enhancement--Mode Lateral MOSFET

Features  Advanced high performance in--package Doherty  Greater negative gate--source voltage range for improved Class C operation  Designed for digital predistortion error correction systems

文件：805.06 Kbytes 页数：23 Pages

恩XP

1800–2200 MHz, 32 W AVG., 48 V AIRFAST RF POWER GaN TRANSISTOR

Features  High Terminal Impedances for Optimal Broadband Performance  Designed for Digital Predistortion Error Correction Systems  Optimized for Doherty Applications

文件：761.3 Kbytes 页数：18 Pages

恩XP

N-Channel Enhancement-Mode Lateral MOSFET

Features  Advanced high performance in--package Doherty  Greater negative gate--source voltage range for improved Class C operation  Designed for digital predistortion error correction systems

文件：254.82 Kbytes 页数：8 Pages

恩XP

N-Channel Enhancement-Mode Lateral MOSFET

Features  Advanced high performance in--package Doherty  Greater negative gate--source voltage range for improved Class C operation  Designed for digital predistortion error correction systems

文件：254.82 Kbytes 页数：8 Pages

恩XP

1800–2200 MHz, 32 W AVG., 48 V AIRFAST RF POWER GaN TRANSISTOR

Features  High Terminal Impedances for Optimal Broadband Performance  Designed for Digital Predistortion Error Correction Systems  Optimized for Doherty Applications

文件：761.3 Kbytes 页数：18 Pages

恩XP

RF Power LDMOS Transistor

N--Channel Enhancement--Mode Lateral MOSFET This 50 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1880 MHz.  Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 1800 mA, Pout = 50 Watts Avg., Input Sign

文件：461.16 Kbytes 页数：13 Pages

恩XP