ATC600F0R5BT250XT说明书PDF资料行情报价-114ic电子网

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ATC600F0R5BT250XT	文件：438.23 Kbytes Page：16 Pages	2110–2170 MHz, 18 W AVG., 28 V AIRFAST RF POWER LDMOS TRANSISTOR Features AdvancedHighPerformanceIn-PackageDoherty GreaterNegativeGate-SourceVoltageRangeforImprovedClassC Operation DesignedforDigitalPredistortionErrorCorrectionSystems	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
ATC600F0R7BT250XT	文件：761.3 Kbytes Page：18 Pages	1800–2200 MHz, 32 W AVG., 48 V AIRFAST RF POWER GaN TRANSISTOR Features HighTerminalImpedancesforOptimalBroadbandPerformance DesignedforDigitalPredistortionErrorCorrectionSystems OptimizedforDohertyApplications	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
ATC600F100JT250XT	文件：761.3 Kbytes Page：18 Pages	1800–2200 MHz, 32 W AVG., 48 V AIRFAST RF POWER GaN TRANSISTOR Features HighTerminalImpedancesforOptimalBroadbandPerformance DesignedforDigitalPredistortionErrorCorrectionSystems OptimizedforDohertyApplications	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
ATC600F100JT250XT	文件：438.23 Kbytes Page：16 Pages	2110–2170 MHz, 18 W AVG., 28 V AIRFAST RF POWER LDMOS TRANSISTOR Features AdvancedHighPerformanceIn-PackageDoherty GreaterNegativeGate-SourceVoltageRangeforImprovedClassC Operation DesignedforDigitalPredistortionErrorCorrectionSystems	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
ATC600F151JT250XT	文件：805.06 Kbytes Page：23 Pages	N--Channel Enhancement--Mode Lateral MOSFET Features Advancedhighperformancein--packageDoherty Greaternegativegate--sourcevoltagerangeforimprovedClassC operation Designedfordigitalpredistortionerrorcorrectionsystems	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
ATC600F1R2BT250XT	文件：761.3 Kbytes Page：18 Pages	1800–2200 MHz, 32 W AVG., 48 V AIRFAST RF POWER GaN TRANSISTOR Features HighTerminalImpedancesforOptimalBroadbandPerformance DesignedforDigitalPredistortionErrorCorrectionSystems OptimizedforDohertyApplications	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
ATC600F1R2BT250XT	文件：254.82 Kbytes Page：8 Pages	N-Channel Enhancement-Mode Lateral MOSFET Features Advancedhighperformancein--packageDoherty Greaternegativegate--sourcevoltagerangeforimprovedClassC operation Designedfordigitalpredistortionerrorcorrectionsystems	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
ATC600F1R5BT250XT	文件：254.82 Kbytes Page：8 Pages	N-Channel Enhancement-Mode Lateral MOSFET Features Advancedhighperformancein--packageDoherty Greaternegativegate--sourcevoltagerangeforimprovedClassC operation Designedfordigitalpredistortionerrorcorrectionsystems	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
ATC600F1R8BT250XT	文件：761.3 Kbytes Page：18 Pages	1800–2200 MHz, 32 W AVG., 48 V AIRFAST RF POWER GaN TRANSISTOR Features HighTerminalImpedancesforOptimalBroadbandPerformance DesignedforDigitalPredistortionErrorCorrectionSystems OptimizedforDohertyApplications	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
ATC600F270JT250XT	文件：461.16 Kbytes Page：13 Pages	RF Power LDMOS Transistor N--ChannelEnhancement--ModeLateralMOSFET This50wattRFpowerLDMOStransistorisdesignedforcellularbasestation applicationscoveringthefrequencyrangeof1805to1880MHz. TypicalSingle--CarrierW--CDMAPerformance:VDD=28Volts, IDQ=1800mA,Pout=50WattsAvg.,InputSign	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
ATC600F2R7BT250XT	文件：254.82 Kbytes Page：8 Pages	N-Channel Enhancement-Mode Lateral MOSFET Features Advancedhighperformancein--packageDoherty Greaternegativegate--sourcevoltagerangeforimprovedClassC operation Designedfordigitalpredistortionerrorcorrectionsystems	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
ATC600F390JT250XT	文件：254.82 Kbytes Page：8 Pages	N-Channel Enhancement-Mode Lateral MOSFET Features Advancedhighperformancein--packageDoherty Greaternegativegate--sourcevoltagerangeforimprovedClassC operation Designedfordigitalpredistortionerrorcorrectionsystems	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
ATC600F390JT250XT	文件：461.16 Kbytes Page：13 Pages	RF Power LDMOS Transistor N--ChannelEnhancement--ModeLateralMOSFET This50wattRFpowerLDMOStransistorisdesignedforcellularbasestation applicationscoveringthefrequencyrangeof1805to1880MHz. TypicalSingle--CarrierW--CDMAPerformance:VDD=28Volts, IDQ=1800mA,Pout=50WattsAvg.,InputSign	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
ATC600F3R0BT250XT	文件：254.82 Kbytes Page：8 Pages	N-Channel Enhancement-Mode Lateral MOSFET Features Advancedhighperformancein--packageDoherty Greaternegativegate--sourcevoltagerangeforimprovedClassC operation Designedfordigitalpredistortionerrorcorrectionsystems	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
ATC600F3R3BT250XT	文件：254.82 Kbytes Page：8 Pages	N-Channel Enhancement-Mode Lateral MOSFET Features Advancedhighperformancein--packageDoherty Greaternegativegate--sourcevoltagerangeforimprovedClassC operation Designedfordigitalpredistortionerrorcorrectionsystems	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
ATC600F470JT250XT	文件：491.92 Kbytes Page：23 Pages	RF LDMOS Wideband Integrated Power Amplifiers TheA2I09VD030Nwidebandintegratedcircuitisdesignedwithon−chip matchingthatmakesitusablefrom575to1300MHz.Thismulti−stage structureisratedfor48to55Voperationandcoversalltypicalcellularbase stationmodulationformats. Features •On−chipmatching(50ohminput,D	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
ATC600F4R3BT250XT	文件：254.82 Kbytes Page：8 Pages	N-Channel Enhancement-Mode Lateral MOSFET Features Advancedhighperformancein--packageDoherty Greaternegativegate--sourcevoltagerangeforimprovedClassC operation Designedfordigitalpredistortionerrorcorrectionsystems	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
ATC600F4R7BT250XT	文件：254.82 Kbytes Page：8 Pages	N-Channel Enhancement-Mode Lateral MOSFET Features Advancedhighperformancein--packageDoherty Greaternegativegate--sourcevoltagerangeforimprovedClassC operation Designedfordigitalpredistortionerrorcorrectionsystems	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
ATC600F5R6BT250XT	文件：254.82 Kbytes Page：8 Pages	N-Channel Enhancement-Mode Lateral MOSFET Features Advancedhighperformancein--packageDoherty Greaternegativegate--sourcevoltagerangeforimprovedClassC operation Designedfordigitalpredistortionerrorcorrectionsystems	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
ATC600F8R2BT250XT	文件：254.82 Kbytes Page：8 Pages	N-Channel Enhancement-Mode Lateral MOSFET Features Advancedhighperformancein--packageDoherty Greaternegativegate--sourcevoltagerangeforimprovedClassC operation Designedfordigitalpredistortionerrorcorrectionsystems	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp

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详细参数

型号：
ATC60
制造商：
FREESCALE
制造商全称：
Freescale Semiconductor, Inc
功能描述：
RF LDMOS Wideband Integrated Power Amplifiers

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市河锋鑫科技有限公司	ATC600F0R7BT250XT	ATC	2022+	SMD	2440	原厂代理终端免费提供样品	询价
深圳市创新迹电子有限公司	ATC600F0R7BT250XT	ATC	23+	SMD	6800	专注配单,只做原装进口现货	询价
深圳市安富世纪电子有限公司	ATC600F0R7BT250XT	ATC	23+	SMD	6800	专注配单,只做原装进口现货	询价
深圳市英瑞尔电子科技有限公司	ATC600F0R7CT250XT	ATC	24+	SMD0805	64580	原装现货假一赔十	询价
深圳市汇莱威科技有限公司	ATC600F0R7CT250XT		ATC	SMD0805	68900	原包原标签100%进口原装常备现货!	询价
深圳市纽联电子有限公司	ATC600F0R8CT250XTATC600F0R5CT250XT	ATC ATC600F1R2CT250XT ATC600F1	21+	ATC600F1R5CT250XT	4000	全新原装现货样品可售	询价
深圳市创芯联盈电子有限公司	ATC600F100FT250T	ATC	1938+	SMD	125000	专营!正规代理专营,错过是损失!	询价
贸泽芯城（深圳）电子科技有限公司	ATC600F100FW50X	ATC	2021+	SMD	5000	原厂授权代理,海外优势订货渠道。可提供大量库存,详	询价
深圳市华来深电子有限公司	ATC600F100JT250	ATC/美国ATCeramics	23+	0805	5000	公司只做原装,可配单	询价
深圳市纳艾斯科技有限公司	ATC600F100JT250XT	ATC	2020+	NA	80000	只做自己库存,全新原装进口正品假一赔百,可开13%增	询价

更多ATC60供应商更新时间2024-6-16 14:02:00

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