ATC600F100JT250XT

1800–2200 MHz, 32 W AVG., 48 V AIRFAST RF POWER GaN TRANSISTOR

Features HighTerminalImpedancesforOptimalBroadbandPerformance DesignedforDigitalPredistortionErrorCorrectionSystems OptimizedforDohertyApplications

ATC600F100JT250XT

2110–2170 MHz, 18 W AVG., 28 V AIRFAST RF POWER LDMOS TRANSISTOR

Features AdvancedHighPerformanceIn-PackageDoherty GreaterNegativeGate-SourceVoltageRangeforImprovedClassC Operation DesignedforDigitalPredistortionErrorCorrectionSystems

ATC600F100JT250XT

RF Power LDMOS Transistors

ATC600F100JT250XT

RF LDMOS Wideband Integrated Power Amplifiers

ATC600F100JT250XT

Gallium Arsenide pHEMT RF Power Field Effect Transistor

ATC600F100JT250XT

RF Power LDMOS Transistor

ATC600F100JT250XT

RF Power GaN Transistor

600F100JT250XT

Ultra-LowESR,HighQ,NPORF&MicrowaveCapacitors

600F100JT250XT

Ultra-LowESR,HighQ,NPORFMicrowaveCapacitors

600F100JT250XT

RFPowerLDMOSTransistorN-ChannelEnhancement-ModeLateralMOSFET

600F100JT250XT

RFLDMOSWidebandIntegratedPowerAmplifiers

600F100JT250XT

AirfastRFPowerGaNTransistor

This27dBmRFpowerGaNtransistorisdesignedforcellularbasestation applicationscoveringthefrequencyrangeof3300to3800MHz. Features •Highterminalimpedancesforoptimalbroadbandperformance •Designedforlowcomplexitylinearizationsystems •Universalbroadbanddriver •