High Self-Resonance

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RF LDMOS Wideband Integrated Power Amplifiers

RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2240N wideband integrated circuit is designed with on-chip matching that makes it usable from 2000 to 2200 MHz. This multi-stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulation formats in

文件：817.31 Kbytes 页数：24 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF LDMOS Wideband Integrated Power Amplifiers

RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2240N wideband integrated circuit is designed with on-chip matching that makes it usable from 2000 to 2200 MHz. This multi-stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulation formats in

文件：817.31 Kbytes 页数：24 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

文件：868.17 Kbytes 页数：13 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

High Self-Resonance

文件：358.88 Kbytes 页数：8 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

High Self-Resonance

文件：358.88 Kbytes 页数：8 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

High Self-Resonance

文件：358.88 Kbytes 页数：8 Pages

ETCList of Unclassifed Manufacturers

未分类制造商