RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET

2--500 MHz, 600 W, 50 V LATERAL N--CHANNEL BROADBAND RF POWER MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications. • Typical DVB--T OFDM Performance: VDD = 50 Volts, IDQ = 2600 mA, Pout = 125 Wa

文件：1.4439 Mbytes 页数：19 Pages

freescaleFreescale Semiconductor, Inc

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RF Power Field Effect Transistor

880 MHz, 10 W AVG., 28 V SINGLE N-CDMA LATERAL N-CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common-source amplifier applica

文件：574.41 Kbytes 页数：15 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power LDMOS Transistors

文件：948.24 Kbytes 页数：19 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power LDMOS Transistors Enhancement--Mode Lateral MOSFETs

文件：1.10464 Mbytes 页数：20 Pages

freescaleFreescale Semiconductor, Inc

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RF LDMOS Wideband Integrated Power Amplifiers

文件：1.14836 Mbytes 页数：22 Pages

恩XP

RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET

文件：1.0447 Mbytes 页数：19 Pages

恩XP

RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET

文件：457.66 Kbytes 页数：13 Pages

恩XP

RF Power LDMOS Transistors

文件：1.43744 Mbytes 页数：27 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体