ATC100B7R5CT500XT

RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET

2--500MHz,600W,50VLATERALN--CHANNELBROADBANDRFPOWERMOSFET Designedprimarilyforwidebandapplicationswithfrequenciesupto500MHz.Deviceisunmatchedandissuitableforuseinbroadcastapplications. •TypicalDVB--TOFDMPerformance:VDD=50Volts,IDQ=2600mA,Pout=125Wa

ATC100B7R5JT500XT

RF Power Field Effect Transistor

880MHz,10WAVG.,28VSINGLEN-CDMALATERALN-CHANNELBROADBANDRFPOWERMOSFET Designedforbroadbandcommercialandindustrialapplicationswithfrequenciesupto1000MHz.Thehighgainandbroadbandperformanceofthisdevicemakesitidealforlarge-signal,common-sourceamplifierapplica

ATC100B7R5CT500XT

RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET

ATC100B7R5CT500XT

RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET

ATC100B7R5CT500XT

RF Power LDMOS Transistors

ATC100B7R5CT500XT

RF Power LDMOS Transistors Enhancement--Mode Lateral MOSFETs

ATC100B7R5CT500XT

RF LDMOS Wideband Integrated Power Amplifiers

ATC100B7R5JT500XT

RF Power LDMOS Transistors