Cell-based ASIC

Description The Atmel ATC20 CBIC family is fabricated on a proprietary 0.21 micron five-layer-metal CMOS process intended for use with a supply voltage of 1.8V ± 0.15V. The following table shows the range for which Atmel library cells have been characterized. Features • Comprehensive Library of

文件：97.84 Kbytes 页数：11 Pages

Atmel

爱特梅尔

RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET

2--500 MHz, 600 W, 50 V LATERAL N--CHANNEL BROADBAND RF POWER MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications. • Typical DVB--T OFDM Performance: VDD = 50 Volts, IDQ = 2600 mA, Pout = 125 Wa

文件：1.4439 Mbytes 页数：19 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors

RF Power Field Effect Transistors N- Channel Enhancement- Mode Lateral MOSFETs Designed primarily for CW large- signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications.

文件：1.19064 Mbytes 页数：19 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET

2--500 MHz, 600 W, 50 V LATERAL N--CHANNEL BROADBAND RF POWER MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications. • Typical DVB--T OFDM Performance: VDD = 50 Volts, IDQ = 2600 mA, Pout = 125 Wa

文件：1.4439 Mbytes 页数：19 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors

RF Power Field Effect Transistors N- Channel Enhancement- Mode Lateral MOSFETs Designed primarily for CW large- signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications.

文件：1.19064 Mbytes 页数：19 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

Alumina

Features: ♦ Alumina Material ♦ DC - 3 GHz Performance ♦ 5 Watt Input Power ♦ CT = Matte Tin over Nickel over Silver ♦ Solder Mountable General Description: The ATC2010CT-0050JN-93 is a .5 dB Alumina chip attenuator. It has an input power of 5 watts, while maintaining a constant mounting

文件：123.16 Kbytes 页数：1 Pages

BARRY

Vishay Barry

1 dB CHIP ATTENUATOR

General Description: The ATC2010CT-0100JN-93 is a 1 dB Alumina chip attenuator. It has an input power of 5 watts, while maintaining a constant mounting surface temperature of 100°C. It offers a frequency range from DC to 3 GHz. Features: ♦ Alumina Material ♦ DC - 3 GHz Performance ♦ 5 W

文件：122.25 Kbytes 页数：1 Pages

BARRY

Vishay Barry

1 dB CHIP ATTENUATOR

General Description: The ATC2010CT-0100JN-93 is a 1 dB Alumina chip attenuator. It has an input power of 5 watts, while maintaining a constant mounting surface temperature of 100°C. It offers a frequency range from DC to 3 GHz. Features: ♦ Alumina Material ♦ DC - 3 GHz Performance ♦ 5 W

文件：122.25 Kbytes 页数：1 Pages

BARRY

Vishay Barry

2 dB CHIP ATTENUATOR

General Description: The ATC2010CT-0200JN-93 is a 2 dB Alumina chip attenuator. It has an input power of 5 watts, while maintaining a constant mounting surface temperature of 100°C. It offers a frequency range from DC to 3 GHz. Features: ♦ Alumina Material ♦ DC - 3 GHz Performance ♦ 5 W

文件：122.4 Kbytes 页数：1 Pages

BARRY

Vishay Barry

2 dB CHIP ATTENUATOR

General Description: The ATC2010CT-0200JN-93 is a 2 dB Alumina chip attenuator. It has an input power of 5 watts, while maintaining a constant mounting surface temperature of 100°C. It offers a frequency range from DC to 3 GHz. Features: ♦ Alumina Material ♦ DC - 3 GHz Performance ♦ 5 W

文件：122.4 Kbytes 页数：1 Pages

BARRY

Vishay Barry