ATC100B3R0BT500XT

RF Power Field Effect Transistor

865--960MHz,28WAVG.,28VSINGLEW--CDMALATERALN--CHANNELRFPOWERMOSFET DesignedforCDMAbasestationapplicationswithfrequenciesfrom865to960MHz.CanbeusedinClassABandClassCforalltypicalcellularbasestationmodulationformats. •TypicalSingle--CarrierW--CDMAPerfor

ATC100B3R0BT500XT

N--Channel Enhancement--Mode Lateral MOSFETs

Features GreaterNegativeGate--SourceVoltageRangeforImprovedClassC Operation DesignedforDigitalPredistortionErrorCorrectionSystems OptimizedforDohertyApplications InTapeandReel.R3Suffix=250Units,32mmTapeWidth,13--inchReel.

ATC100B3R0BT500XT

1805–2200 MHz, 107 W AVG., 48 V AIRFAST RF POWER GaN TRANSISTOR

Features Highterminalimpedancesforoptimalbroadbandperformance Advancedhighperformancein--packageDoherty AbletowithstandextremelyhighoutputVSWRandbroadbandoperating conditions

ATC100B3R0CT500XT

RF Power LDMOS Transistor

N--ChannelEnhancement--ModeLateralMOSFET This38WRFpowerLDMOStransistorisdesignedforcellularbasestation applicationsrequiringverywideinstantaneousbandwidthcapabilitycovering thefrequencyrangeof1805to1995MHz. Features Designedforwideinstantaneousbandwidthap

ATC100B3R0CT500XT

RF Power LDMOS Transistors

ATC100B3R0CT500XT

RF Power LDMOS Transistors Enhancement--Mode Lateral MOSFETs

ATC100B3R0CT500XT

RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs

ATC100B3R0CT500XT

RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET