RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET

This 93 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1427 to 1517 MHz. Features • Advanced high performance in−package Doherty • Greater negative gate−source voltage range for improved Class C operation

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恩XP

RF Power Field Effect Transistors

文件：443.39 Kbytes 页数：13 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

QFN68

ACTIONS

上传：深圳广友电子有限公司

DIP

佐臻

上传：佛山市芯光达科技有限公司

PLCC44

Microchip

微芯科技

上传：深圳市粤骏腾电子科技有限公司