BAV303-TR

SmallSignalSwitchingDiodes,HighVoltage

FEATURES •Siliconepitaxialplanardiodes •Savingspace •Hermeticsealedparts •FitsontoSOD-323/SOT-23footprints •Electricaldataidenticalwiththedevices   BAV100toBAV103,BAV200toBAV203 •AEC-Q101qualified •Materialcategorization:Fordefinitionsofcompliancepleasese

BB-303

BaseboardforTMCM-303/TMCM-343

BB303M

BuildinBiasingCircuitMOSFETICVHF/UHFRFAmplifier

Features •BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. •Highforwardtransferadmittance;(|yfs|=42mStyp.atf=1kHz) •WithstandingtoESD;BuildinESDabsorbingdiode.Withstandupto250VatC=200pF,Rs=0conditions. •Provideminimoldpackages;MPAK-

BC303

PNPSILICONAFMEDIUMPOWERAMPLIFIERS&SWITCHES

PNPSILICONAFMEDIUMPOWERAMPLIFIERS&SWITCHES

BC303

SmallSignalTransistors

BC303

BipolarPNPDeviceinaHermeticallysealedTO39

BC303

PNPEXPITAXIALPLANARSILICONTRANSISTORS

BC303

BA/BCSeries:1.5-6.0WattsSingleandDualOutputs

FEATURES •InputπFilter •FullyRegulatedOutputs •IndustryStandardPinouts •5,12,24,28,and48VDCInputs •RippleandNoiseLessThan50mVpp •Input/OutputIsolation

BD303

iscSiliconNPNPowerTransistor

DESCRIPTION •DCCurrentGain-:hFE=30(Min.)@IC=2A •Collector-EmitterBreakdownVoltage-:V(BR)CEO=60V(Min.) •ComplementtoTypeBD304 APPLICATIONS •Designedforaudiooutputstagesupto25W,verticaldeflectioncircuitsincolorTVreceivers.

BD303N

30AmpereStandardTypeNegativeBlockRectifierDiodesforAutomotiveAlternators