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ATA6623-TAPY

LINBusTransceiverwithIntegratedVoltageRegulator

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

ATA6623-TAPY

LINBusTransceiverwithIntegratedVoltageRegulator

Description ATA6623/ATA6625isafullyintegratedLINtransceiver,designedaccordingtotheLINspecification2.0and2.1,withalow-dropvoltageregulator(3.3V/5V/50mA).Thecombinationofvoltageregulatorandbustransceivermakesitpossibletodevelopsimple,butpowerful,slavenodes

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

ATA6623-TAQY

LINBusTransceiverwithIntegratedVoltageRegulator

Description ATA6623/ATA6625isafullyintegratedLINtransceiver,designedaccordingtotheLINspecification2.0and2.1,withalow-dropvoltageregulator(3.3V/5V/50mA).Thecombinationofvoltageregulatorandbustransceivermakesitpossibletodevelopsimple,butpowerful,slavenodes

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

ATA6623-TAQY

LINBusTransceiverwithIntegratedVoltageRegulator

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

CPH6623

P-ChannelSiliconMOSFETGeneral-PurposeSwitchingDevice

SANYOSanyo Semicon Device

三洋三洋电机株式会社

ECWF6623

MetallizedPolypropyleneFilmCapacitor

MetallizedPolypropyleneFilmCapacitor Type:ECWF(L) Non-inductiveconstructionusingmetallizedpolypropylenefilmwithflameretardantepoxyresincoating. Features ●Smallsize ●Excellentfrequencycharacteristics ●Lowloss ●Flameretardantepoxyresincoating ●85°C,85RH,W.V.

PanasonicPanasonic Semiconductor

松下松下电器

ECWF6623ML

MetallizedpolyoropyleneFilmCapacitor

MetallizedPolypropyleneFilmCapacitor Type:ECWF(L) Non-inductiveconstructionusingmetallizedpolypropylenefilmwithflameretardantepoxyresincoating. Features ●Smallsize ●Excellentfrequencycharacteristics ●Lowloss ●Flameretardantepoxyresincoating ●85°C,85RH,W.V.

PanasonicPanasonic Semiconductor

松下松下电器

IRF6623

HEXFETPowerMOSFET

Description TheIRF6623combinesthelatestHEXFET®PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaMICRO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayout

IRF

International Rectifier

IRF6623PBF

DirectFETPowerMOSFET

Description TheIRF6623PbFcombinesthelatestHEXFET®PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaMICRO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayo

IRF

International Rectifier

IRF6623PBF

IdealforCPUCoreDC-DCConverters

IRF

International Rectifier

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