MOSFET

Aonetek

凯晶

N-Channel Enhancement Mode Power MOSFET

文件：595.53 Kbytes 页数：6 Pages

Belling

上海贝岭

N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES ● 20V , 26A , RDS(ON)=30mΩ @VGS=4.5V. RDS(ON)=40m @V Ω GS=2.5V. ● Super high dense cell design for extremely low RDS(ON). ● High power and current handling capability. ● TO-251 & TO-252 package.

文件：59.68 Kbytes 页数：5 Pages

CET

华瑞

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 20V , 4.5A , RDS(ON)=30mΩ @VGS=4.5V. RDS(ON)=40mΩ @VGS=2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TSSOP-8 for Surface Mount Package.

文件：56.14 Kbytes 页数：5 Pages

CET

华瑞