4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

文件：210.85 Kbytes 页数：12 Pages

ATMEL

爱特梅尔

4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

文件：210.85 Kbytes 页数：12 Pages

ATMEL

爱特梅尔

4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

文件：210.85 Kbytes 页数：12 Pages

ATMEL

爱特梅尔

4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

文件：210.85 Kbytes 页数：12 Pages

ATMEL

爱特梅尔

4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

文件：210.85 Kbytes 页数：12 Pages

ATMEL

爱特梅尔

4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

文件：210.85 Kbytes 页数：12 Pages

ATMEL

爱特梅尔

4-megabit (512K x 8) Single 2.7-volt Battery-Voltage™ Flash Memory

Description\nThe AT49BV040A is a 2.7-volt-only in-system reprogrammable Flash Memory. Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 70 ns with power dissipation of just 54 mW over th • Single Supply for Read and Write: 2.7 to 3.6V\n• Fast Read Access Time – 70 ns\n• Internal Program Control and Timer\n• Sector Architecture\n   – One 16K Bytes Boot Block with Programming Lockout\n   – Two 8K Bytes Parameter Blocks\n   – Eight Main Memory Blocks (One 32K Bytes, Seven 64K Bytes)\n•;

Microchip

微芯科技

4-Megabit (512K x 8) Single 2.7-volt Battery-Voltage™ Flash Memory

Description\nThe AT49BV/LV040 are 3-volt-only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS tech nology, the devices offer access times to 120 ns with power dissipation of just 90 mW over the commercial temperature range. Whe • Single Voltage for Read and Write: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV)\n• Fast Read Access Time - 120 ns\n• Internal Program Control and Timer\n• 16K bytes Boot Block With Lockout\n• Fast Chip Erase Cycle Time - 10 seconds\n• Byte-by-Byte Programming - 30 µs/Byte Typical\n• Hardware Data Protecti;

Microchip

微芯科技

Package：32-LCC（J 形引线）；包装：管件 类别：集成电路（IC） 存储器 描述：IC FLASH 4MBIT PARALLEL 32PLCC

MICROCHIP

微芯科技

Package：32-TFSOP（0.724"，18.40mm 宽）；包装：管件 类别：集成电路（IC） 存储器 描述：IC FLASH 4MBIT PARALLEL 32TSOP

MICROCHIP

微芯科技