4-megabit (512K x 8) Single 2.7-volt Battery-Voltage??Flash Memory

Description The AT49BV040A is a 2.7-volt-only in-system reprogrammable Flash Memory. Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 70 ns with power dissipation of just 54 mW over

文件：182.54 Kbytes 页数：17 Pages

ATMEL

爱特梅尔

4-megabit (512K x 8) Single 2.7-volt Battery-Voltage??Flash Memory

Description The AT49BV040A is a 2.7-volt-only in-system reprogrammable Flash Memory. Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 70 ns with power dissipation of just 54 mW over

文件：182.54 Kbytes 页数：17 Pages

ATMEL

爱特梅尔

4-megabit (512K x 8) Single 2.7-volt Battery-Voltage??Flash Memory

Description The AT49BV040A is a 2.7-volt-only in-system reprogrammable Flash Memory. Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 70 ns with power dissipation of just 54 mW over

文件：182.54 Kbytes 页数：17 Pages

ATMEL

爱特梅尔

4-megabit (512K x 8) Single 2.7-volt Battery-Voltage??Flash Memory

Description The AT49BV040A is a 2.7-volt-only in-system reprogrammable Flash Memory. Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 70 ns with power dissipation of just 54 mW over

文件：182.54 Kbytes 页数：17 Pages

ATMEL

爱特梅尔

4-megabit (512K x 8) Single 2.7-volt Battery-Voltage™ Flash Memory

Description\nThe AT49BV040A is a 2.7-volt-only in-system reprogrammable Flash Memory. Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 70 ns with power dissipation of just 54 mW over th • Single Supply for Read and Write: 2.7 to 3.6V\n• Fast Read Access Time – 70 ns\n• Internal Program Control and Timer\n• Sector Architecture\n   – One 16K Bytes Boot Block with Programming Lockout\n   – Two 8K Bytes Parameter Blocks\n   – Eight Main Memory Blocks (One 32K Bytes, Seven 64K Bytes)\n•;

Microchip

微芯科技

Package：32-LCC（J 形引线）；包装：卷带（TR） 类别：集成电路（IC） 存储器 描述：IC FLASH 4MBIT PARALLEL 32PLCC

MICROCHIP

微芯科技

Package：32-LCC（J 形引线）；包装：卷带（TR） 类别：集成电路（IC） 存储器 描述：IC FLASH 4MBIT PARALLEL 32PLCC

MICROCHIP

微芯科技

Package：32-TFSOP（0.724"，18.40mm 宽）；包装：管件 类别：集成电路（IC） 存储器 描述：IC FLASH 4MBIT PARALLEL 32TSOP

MICROCHIP

微芯科技