AT29LV512数据手册集成电路（IC）的存储器规格书PDF

描述 Description

The AT29LV512 is a 3-volt-only in-system Flash programmable erasable read-only memory (PEROM). Its 512K of memory is organized as 65,536 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 54 mW over the industrial temperature range. When the device is deselected, the CMOS standby current is less than 50 µA. The device endurance is such that any sector can typically be written to in excess of 10,000 times.
To allow for simple in-system reprogrammability, the AT29LV512 does not require high input voltages for programming. Three-volt-only commands determine the operation of the device. Reading data out of the device is similar to reading from an EPROM. Reprogramming the AT29LV512 is performed on a sector basis; 128 bytes of data are loaded into the device and then simultaneously programmed.

特性 Features

• Single Supply Voltage, Range 3V to 3.6V
• 3-volt Only Read and Write Operation
• Software Protected Programming
• Low-power Dissipation
   – 15 mA Active Current
   – 50 µA CMOS Standby Current
• Fast Read Access Time – 120 ns
• Sector Program Operation
   – Single-cycle Reprogram (Erase and Program)
   – 512 Sectors (128 Bytes/Sector)
   – Internal Address and Data Latches for 128 Bytes
• Fast Sector Program Cycle Time – 20 ms Max
• Internal Program Control and Timer
• DATA Polling for End of Program Detection
• Typical Endurance 10,000 Cycles
• CMOS and TTL Compatible Inputs and Outputs
• Green (Pb/Halide-free) Packaging Option

简介

AT29LV512属于集成电路（IC）的存储器。由制造生产的AT29LV512存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。