AT29LV040A数据手册集成电路（IC）的存储器规格书PDF

描述 Description

The AT29LV040A is a 3-volt only in-system Flash Programmable and Erasable Read Only Memory (PEROM). Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technology, the device offers access times to 150 ns, and a low 54 mW power dissipation. When the device is deselected, the CMOS standby current is less than 50 µA. The device endurance is such that any sector can typically be written to in excess of 10,000 times. The programming algorithm is compatible with other devices in Atmel’s 3-volt only Flash memories.
To allow for simple in-system reprogrammability, the AT29LV040A does not require high input voltages for programming. Three-volt-only commands determine the operation of the device. Reading data out of the device is similar to reading from an EPROM. Reprogramming the AT29LV040A is performed on a sector basis; 256 bytes of data are loaded into the device and then simultaneously programmed.

特性 Features

• Single Voltage, Range 3V to 3.6V Supply
• 3-volt Only Read and Write Operation
• Software Protected Programming
• Fast Read Access Time – 150 ns
• Low Power Dissipation
   – 15 mA Active Current
   – 50 µA CMOS Standby Current
• Sector Program Operation
   – Single Cycle Reprogram (Erase and Program)
   – 2048 Sectors (256 Bytes/Sector)
   – Internal Address and Data Latches for 256 Bytes
• Two 16K Bytes Boot Blocks with Lockout
• Fast Sector Program Cycle Time – 20 ms Max
• Internal Program Control and Timer
• DATA Polling for End of Program Detection
• Typical Endurance 10,000 Cycles
• CMOS and TTL Compatible Inputs and Outputs
• Green (Pb/Halide-free) Packaging Option

简介

AT29LV040A属于集成电路（IC）的存储器。由制造生产的AT29LV040A存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。