AT29LV1024数据手册集成电路（IC）的存储器规格书PDF

描述 Description

The AT29LV1024 is a 3-volt-only in-system Flash programmable and erasable read only memory (PEROM). Its 1 megabit of memory is organized as 65,536 words by 16 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 150 ns with power dissipation of just 54 mW. When the device is deselected, the CMOS standby current is less than 50 µA. The device endurance is such that any sector can typically be written to in excess of 10,000 times.

特性 Features

• Single Voltage, Range 3V to 3.6V Supply
• 3-Volt-Only Read and Write Operation
• Software Protected Programming
• Fast Read Access Time - 150 ns
• Low Power Dissipation
    15 mA Active Current
    50 µA CMOS Standby Current
• Sector Program Operation
    Single Cycle Reprogram (Erase and Program)
    512 Sectors (128 words/sector)
    Internal Address and Data Latches for 128 Words
• Fast Sector Program Cycle Time - 20 ms
• Internal Program Control and Timer
• DATA Polling for End of Program Detection
• Typical Endurance 10,000 Cycles
• CMOS and TTL Compatible Inputs and Outputs
• Commercial and Industrial Temperature Ranges

简介

AT29LV1024属于集成电路（IC）的存储器。由制造生产的AT29LV1024存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。