256 (32K x 8) High-speed Parallel EEPROM

Description The AT28HC256N is a high-performance electrically erasable and programmable read only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the AT28HC256N offers access times to 90 ns with power dissipation o

文件：230.23 Kbytes 页数：13 Pages

ATMEL

爱特梅尔

256 (32K x 8) High-speed Parallel EEPROM

Description The AT28HC256N is a high-performance electrically erasable and programmable read only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the AT28HC256N offers access times to 90 ns with power dissipation o

文件：230.23 Kbytes 页数：13 Pages

ATMEL

爱特梅尔

256 (32K x 8) High-speed Parallel EEPROM

Description The AT28HC256N is a high-performance electrically erasable and programmable read only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the AT28HC256N offers access times to 90 ns with power dissipation o

文件：230.23 Kbytes 页数：13 Pages

ATMEL

爱特梅尔

Automatic Page Write Operation

文件：243.71 Kbytes 页数：13 Pages

ATMEL

爱特梅尔

Automatic Page Write Operation

Microchip

微芯科技