首页 >AT280B-BC>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
2.0AHIGHVOLTAGESCHOTTKYBARRIERRECTIFIER | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
SurfaceMountSchottkyBarrierDiodes Features: *PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-0UtilizingFlame RetardantEpoxyMoldingCompound. *Forsurfacemountedapplications. *ExceedsenvironmentalstandardsofML-S-19500/228 *Lowleakagecurrent | WEITRON Weitron Technology | WEITRON | ||
2.0AHIGHVOLTAGESCHOTTKYBARRIERRECTIFIER | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
FREDDiode(VRRM1000VIFRMS5.5A55nsSoftrecoverycharacteristics) FREDDiode PreliminaryData ●VRRM1000V ●IFRMS5.5A ●trr55ns ●Softrecoverycharacteristics | SIEMENSSiemens Semiconductor Group 西门子德国西门子股份公司 | SIEMENS | ||
NPNSiliconRFTransistor(Forlownoise,low-poweramplifiersinmobilecommunicationsystems) NPNSiliconRFTransistor •Forlownoise,low-poweramplifiersinmobile communicationsystems(pager,cordlesstelephone)atcollectorcurrentsfrom0.2mAto8mA •fT=7,5GHz F=1.5dBat900MHz | SIEMENSSiemens Semiconductor Group 西门子德国西门子股份公司 | SIEMENS | ||
SiliconNPNPlanarRFTransistor Applications Forlownoiseandhighgainbroadbandamplifiersatcollectorcurrentsfrom0.2mAto8mA. | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
SiliconNPNPlanarRFTransistor Applications Forlownoiseandhighgainbroadbandamplifiersatcollectorcurrentsfrom0.2mAto8mA. | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
SiliconNPNPlanarRFTransistor Applications Forlownoiseandhighgainbroadbandamplifiersatcollectorcurrentsfrom0.2mAto8mA. | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
NPNSiliconRFTransistor(Forlownoise,low-poweramplifiersinmobilecommunicationsystems) NPNSiliconRFTransistor •Forlownoise,low-poweramplifiersinmobile communicationsystems(pager,cordlesstelephone)atcollectorcurrentsfrom0.2mAto8mA •fT=7,5GHz F=1.5dBat900MHz | SIEMENSSiemens Semiconductor Group 西门子德国西门子股份公司 | SIEMENS | ||
NPNSiliconRFTransistor NPNSiliconRFTransistor •Forlownoise,low-poweramplifiersinmobilecommunicationssystems(pager,cordlesstelephone)atcollectorcurrentsfrom0.2mAto8m •fT=7.5GHz F=1.5dBat900MHz | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon |
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