丝印：AT120C；Package：SOT223；Schottky barrier double diodes

FEATURES •Low switching losses •Capability of absorbing very high surge current •Fast recovery time •Guard ring protected •Plastic SMD package. APPLICATIONS •Low power switched-mode power supplies •Rectification •Polarity protection. DESCRIPTION Planar Schottky barrier double diodes

文件：368.91 Kbytes 页数：8 Pages

NEXPERIA

安世

丝印：AT120S；Package：SOT223；Schottky barrier double diodes

FEATURES •Low switching losses •Capability of absorbing very high surge current •Fast recovery time •Guard ring protected •Plastic SMD package. APPLICATIONS •Low power switched-mode power supplies •Rectification •Polarity protection. DESCRIPTION Planar Schottky barrier double diodes

文件：368.91 Kbytes 页数：8 Pages

NEXPERIA

安世

SILICON ABRUPT VARACTOR DIODE

ASI Semiconductor

SILICON ABRUPT VARACTOR DIODE

ASI Semiconductor

Package：1206（3216 公制）；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：电阻器 片式电阻器 - 表面贴装 描述：RES SMD 100K OHM 0.1% 1/4W 1206

YAGEO

国巨

Package：1206（3216 公制）；包装：卷带（TR） 类别：电阻器 片式电阻器 - 表面贴装 描述：RES SMD 100 OHM 0.1% 1/4W 1206

YAGEO

国巨

Package：1206（3216 公制）；包装：卷带（TR） 类别：电阻器 片式电阻器 - 表面贴装 描述：RES SMD 100 OHM 0.1% 1/4W 1206

YAGEO

国巨