GaAs E-pHEMT Gain Block Amplifier

•16 dB Gain at 900 MHz\n•44 dBm OIP3 at 900 MHz\n•21 dBm P1dB at 900 MHz\n•1.9 dB NF\n•Single Supply (VD, volts): 5.0\n•Lead-free/Green/RoHS-compliant Package\n•Package Type: SOT89;

ASB

MMIC Amplifier

文件：1.26414 Mbytes 页数：23 Pages

ASB

Low-voltage stabistor

DESCRIPTION Low-voltage stabilization diode in a hermetically-sealed SOD27 (DO-35) glass package. FEATURES • Low-voltage stabilization • Forward voltage range: 610 mV to 940 mV • Total power dissipation: max. 400 mW. APPLICATIONS • Low-voltage stabilization e.g. – Bias

文件：28 Kbytes 页数：5 Pages

PHI

飞利浦

isc Silicon PNP Power Transistor

DESCRIPTION • Excellent Safe Operating Area • DC Current Gain-hFE= 25(Min.)@IC = -4A • Collector-Emitter Saturation Voltage- : VCE(sat)= -1.0 V(Max)@ IC = -5A • Complement to Type BD313 APPLICATIONS • Designed for high quality amplifiers operating up to 60 watts into 4 ohm load.

文件：216.04 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION • Excellent Safe Operating Area • DC Current Gain-hFE= 25(Min.)@IC = -4A • Collector-Emitter Saturation Voltage- : VCE(sat)= -1.0 V(Max)@ IC = -5A • Complement to Type BD313 APPLICATIONS • Designed for high quality amplifiers operating up to 60 watts into 4 ohm load.

文件：128.419 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司