首页 >ASSR-301C>规格书列表

零件编号下载&订购功能描述制造商&上传企业LOGO

BAV301

HIGHVOLTAGESURFACEMOUNTSWITCHINGDIODES

VOLTAGE120to250VoltsPOWER300mWatts FEATURES •FastswitchingSpeed. •SurfaceMountPackageIdeallySuitedForAutomaticInsertion. •SiliconEpitaxalPlanarConstruction. •IncompliancewithEURoHS2002/95/ECdirectives

PANJITPANJIT International Inc.

强茂強茂股份有限公司

BAV301

SmallSignalSwitchingDiodes,HighVoltage

FEATURES •Siliconepitaxialplanardiodes •Savingspace •Hermeticsealedparts •FitsontoSOD-323/SOT-23footprints •Electricaldataidenticalwiththedevices BAV100toBAV103,BAV200toBAV203 •Materialcategorization: fordefinitionsofcompliancepleasesee www.vishay.com/doc?99

VishayVishay Siliconix

威世科技

BAV301-TR

SmallSignalSwitchingDiodes,HighVoltage

FEATURES •Siliconepitaxialplanardiodes •Savingspace •Hermeticsealedparts •FitsontoSOD-323/SOT-23footprints •Electricaldataidenticalwiththedevices   BAV100toBAV103,BAV200toBAV203 •AEC-Q101qualified •Materialcategorization:Fordefinitionsofcompliancepleasese

VishayVishay Siliconix

威世科技

BB301

BuildinBiasingCircuitMOSFETICUHFRFAmplifier

Features •BuildinBiasingCircuit; Toreduceusingpartscost&PCboardspace. •Lownoisecharacteristics;(NF=1.3dBtyp.atf=200MHz) •WithstandingtoESD;BuildinESDabsorbingdiode. Withstandupto200VatC=200pF, Rs=0conditions.

HitachiHitachi, Ltd.

日立公司

BB301

BuildinBiasingCircuitMOSFETICUHFRFAmplifier

Features •BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. •Lownoisecharacteristics;(NF=1.3dBtyp.atf=200MHz) •WithstandingtoESD;BuildinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions.

HitachiHitachi, Ltd.

日立公司

BB-301

BaseboardforoneTMCM-301/TMCM-341andupto3TMCM-035

TRINAMICTRINAMIC Motion Control GmbH & Co. KG.

TRINAMIC Motion Control GmbH & Co. KG.

BB301C

BuildinBiasingCircuitMOSFETICUHFRFAmplifier

Features •BuildinBiasingCircuit; Toreduceusingpartscost&PCboardspace. •Lownoisecharacteristics;(NF=1.3dBtyp.atf=200MHz) •WithstandingtoESD;BuildinESDabsorbingdiode. Withstandupto200VatC=200pF, Rs=0conditions.

HitachiHitachi, Ltd.

日立公司

BB301C

BuiltinBiasingCircuitMOSFETICVHFRFAmplifier

Features •BuiltinBiasingCircuit; Toreduceusingpartscost&PCboardspace. •Lownoisecharacteristics; (NF=1.3dBtyp.atf=200MHz) •WithstandingtoESD; BuiltinESDabsorbingdiode. Withstandupto200VatC=200pF,Rs=0conditions. •Provideminimoldpackag

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

BB301CAW-TL-E

BuiltinBiasingCircuitMOSFETICVHFRFAmplifier

Features •BuiltinBiasingCircuit; Toreduceusingpartscost&PCboardspace. •Lownoisecharacteristics; (NF=1.3dBtyp.atf=200MHz) •WithstandingtoESD; BuiltinESDabsorbingdiode. Withstandupto200VatC=200pF,Rs=0conditions. •Provideminimoldpackag

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

BB301M

BuiltinBiasingCircuitMOSFETICVHFRFAmplifier

Features •BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. •Lownoisecharacteristics;(NF=1.3dBtyp.atf=200MHz) •WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. •Provideminimoldpackages;MPAK-4(SOT-1

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

BB301M

BuildinBiasingCircuitMOSFETICUHFRFAmplifier

Features •BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. •Lownoisecharacteristics;(NF=1.3dBtyp.atf=200MHz) •WithstandingtoESD;BuildinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions.

HitachiHitachi, Ltd.

日立公司

BB301MAW-TL-E

BuiltinBiasingCircuitMOSFETICVHFRFAmplifier

Features •BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. •Lownoisecharacteristics;(NF=1.3dBtyp.atf=200MHz) •WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. •Provideminimoldpackages;MPAK-4(SOT-1

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

BB-301S

BaseboardforoneTMCM-301andupto3TMCM-035with24VI/Os

TRINAMICTRINAMIC Motion Control GmbH & Co. KG.

TRINAMIC Motion Control GmbH & Co. KG.

BC301

BipolarNPNDeviceinaHermeticallysealedTO39

SEME-LAB

Seme LAB

BC301

NPNEPITAXIALPLANARSILICONTRANSISTORS

NPNEPITAXIALPLANARSILICONTRANSISTORS NPNSILICONLOW-AND-MEDIUMPOWERTRANSISTORS.

CDIL

CDIL

BC301

SmallSignalTransistors

CentralCentral Semiconductor Corp

美国中央半导体

BC301

PNPSILICONAFMEDIUMPOWERAMPLIFIERS&SWITCHES

NPNSILICONAFMEDIUMPOWERAMPLIFIERS&SWITCHES

MICRO-ELECTRONICS

Micro Electronics

BC301

BA/BCSeries:1.5-6.0WattsSingleandDualOutputs

FEATURES •InputπFilter •FullyRegulatedOutputs •IndustryStandardPinouts •5,12,24,28,and48VDCInputs •RippleandNoiseLessThan50mVpp •Input/OutputIsolation

ETCList of Unclassifed Manufacturers

未分类制造商

BC301N-D

GasDischargeTube

Bencent

槟城电子

BD301

iscSiliconNPNPowerTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

详细参数

  • 型号:

    ASSR-301C

  • 功能描述:

    固态继电器-PCB安装 SSR(CR+1A)(250V 0.05A)

  • RoHS:

  • 制造商:

    Omron Electronics

  • 负载电压额定值:

    40 V

  • 负载电流额定值:

    120 mA

  • 触点形式:

    1 Form A(SPST-NO)

  • 输出设备:

    MOSFET

  • 封装/箱体:

    USOP-4

  • 安装风格:

    SMD/SMT

供应商型号品牌批号封装库存备注价格
AVAGO/安华高
2021+
SOP4
8903
诚信经营..品质保证..价格优势
询价
AVAGO
2017+
SOP4
54785
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
询价
AVAGO
24+
SOP4
5000
全现原装公司现货
询价
AVAGO
22+23+
SOP4
26809
绝对原装正品全新进口深圳现货
询价
23+
N/A
48900
正品授权货源可靠
询价
AVAGO
专业光耦
SOP4
65800
光耦原装优势主营型号-可开原型号增税票
询价
AVAGO/安华高
20+
SOP4
24
诚信经营..品质保证..价格优势
询价
AVAGO/安华高
2021+
DIPSMD
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
AVAGO/安华高
21+
SOP4
120000
长期代理优势供应
询价
AVAGO/安华高
SOP4
265209
假一罚十原包原标签常备现货!
询价
更多ASSR-301C供应商 更新时间2024-5-24 14:08:00