Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 1.3 dB typ. at f = 200 MHz) • Withstanding to ESD; Build in ESD absorbing diode . Withstand up to 200 V at C = 200 pF, Rs = 0 conditions.

文件：46.16 Kbytes 页数：10 Pages

HitachiHitachi Semiconductor

日立日立公司

Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 1.3 dB typ. at f = 200 MHz) • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF, Rs = 0 conditions.

文件：46.12 Kbytes 页数：10 Pages

HitachiHitachi Semiconductor

日立日立公司

Build in Biasing Circuit MOS FET IC UHF RF Amplifier

HITACHI

日立

Built in Biasing Circuit MOS FET IC VHF RF Amplifier

Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 1.3 dB typ. at f = 200 MHz) • Withstanding to ESD; Built in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. • Provide mini mold packag

文件：271.19 Kbytes 页数：8 Pages

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瑞萨

Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 1.3 dB typ. at f = 200 MHz) • Withstanding to ESD; Build in ESD absorbing diode . Withstand up to 200 V at C = 200 pF, Rs = 0 conditions.

文件：46.16 Kbytes 页数：10 Pages

HitachiHitachi Semiconductor

日立日立公司

Built in Biasing Circuit MOS FET IC VHF RF Amplifier

Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 1.3 dB typ. at f = 200 MHz) • Withstanding to ESD; Built in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. • Provide mini mold packag

文件：271.19 Kbytes 页数：8 Pages

RENESAS

瑞萨

Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 1.3 dB typ. at f = 200 MHz) • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF, Rs = 0 conditions.

文件：46.12 Kbytes 页数：10 Pages

HitachiHitachi Semiconductor

日立日立公司

Built in Biasing Circuit MOS FET IC VHF RF Amplifier

Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 1.3 dB typ. at f = 200 MHz) • Withstanding to ESD; Built in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. • Provide mini mold packages; MPAK-4(SOT-1

文件：181.81 Kbytes 页数：8 Pages

RENESAS

瑞萨

Built in Biasing Circuit MOS FET IC VHF RF Amplifier

Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 1.3 dB typ. at f = 200 MHz) • Withstanding to ESD; Built in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. • Provide mini mold packages; MPAK-4(SOT-1

文件：181.81 Kbytes 页数：8 Pages

RENESAS

瑞萨

Built in Biasing Circuit MOS FET IC VHF RF Amplifier

• Built in Biasing Circuit;\n   To reduce using parts cost & PC board space.\n• Low noise characteristics;\n   (NF = 1.3 dB typ. at f = 200 MHz)\n• Withstanding to ESD;\n   Built in ESD absorbing diode.\n   Withstand up to 200V at C=200pF, Rs=0 conditions.\n• Provide mini mold packages; CMPAK-4(SOT-;

Renesas

瑞萨