BB301

Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Features •BuildinBiasingCircuit; Toreduceusingpartscost&PCboardspace. •Lownoisecharacteristics;(NF=1.3dBtyp.atf=200MHz) •WithstandingtoESD;BuildinESDabsorbingdiode. Withstandupto200VatC=200pF, Rs=0conditions.

BB301

Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Features •BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. •Lownoisecharacteristics;(NF=1.3dBtyp.atf=200MHz) •WithstandingtoESD;BuildinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions.

BB301C

Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Features •BuildinBiasingCircuit; Toreduceusingpartscost&PCboardspace. •Lownoisecharacteristics;(NF=1.3dBtyp.atf=200MHz) •WithstandingtoESD;BuildinESDabsorbingdiode. Withstandupto200VatC=200pF, Rs=0conditions.

BB301C

Built in Biasing Circuit MOS FET IC VHF RF Amplifier

Features •BuiltinBiasingCircuit; Toreduceusingpartscost&PCboardspace. •Lownoisecharacteristics; (NF=1.3dBtyp.atf=200MHz) •WithstandingtoESD; BuiltinESDabsorbingdiode. Withstandupto200VatC=200pF,Rs=0conditions. •Provideminimoldpackag

BB301CAW-TL-E

Built in Biasing Circuit MOS FET IC VHF RF Amplifier

Features •BuiltinBiasingCircuit; Toreduceusingpartscost&PCboardspace. •Lownoisecharacteristics; (NF=1.3dBtyp.atf=200MHz) •WithstandingtoESD; BuiltinESDabsorbingdiode. Withstandupto200VatC=200pF,Rs=0conditions. •Provideminimoldpackag

BB301M

Built in Biasing Circuit MOS FET IC VHF RF Amplifier

Features •BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. •Lownoisecharacteristics;(NF=1.3dBtyp.atf=200MHz) •WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. •Provideminimoldpackages;MPAK-4(SOT-1

BB301M

Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Features •BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. •Lownoisecharacteristics;(NF=1.3dBtyp.atf=200MHz) •WithstandingtoESD;BuildinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions.

BB301MAW-TL-E

Built in Biasing Circuit MOS FET IC VHF RF Amplifier

Features •BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. •Lownoisecharacteristics;(NF=1.3dBtyp.atf=200MHz) •WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. •Provideminimoldpackages;MPAK-4(SOT-1

BB301C

Built in Biasing Circuit MOS FET IC VHF RF Amplifier; • Built in Biasing Circuit;\n   To reduce using parts cost & PC board space.\n• Low noise characteristics;\n   (NF = 1.3 dB typ. at f = 200 MHz)\n• Withstanding to ESD;\n   Built in ESD absorbing diode.\n   Withstand up to 200V at C=200pF, Rs=0 conditions.\n• Provide mini mold packages; CMPAK-4(SOT-343mod);