首页 >ASRD703B>规格书列表

零件编号下载 订购功能描述/丝印制造商 上传企业LOGO

ASRD703B

GLASS PACKAGE STEP RECOVERY DIODE

DESCRIPTION: TheASRD700SeriesofStepRecoveryDiodesareDesignedforGeneralPurposeVCOandSamplerApplications. FEATURESINCLUDE: •TransitionTimeasLowas70pS •HermeticGlassPackage

ASI

Advanced Semiconductor

ASRD703T

GLASSPACKAGESTEPRECOVERYDIODE

DESCRIPTION: TheASRD700SeriesofStepRecoveryDiodesareDesignedforGeneralPurposeVCOandSamplerApplications. FEATURESINCLUDE: •TransitionTimeasLowas70pS •HermeticGlassPackage

ASI

Advanced Semiconductor

B703

XDSLSPLITTERFILTERMODULE

pulse

Pulse A Technitrol Company

BIC703C

BiasControlledMonolithicICVHF/UHFRFAmplifier

Features •BiasControlledMonolithicIC(NoexternalDCbiasingvoltageongate1.);Toreduceusingpartscost&PCboardspace. •High|yfs|;|yfs|=29mStyp.(f=1kHz) •Lownoise;NF=1.0dBtyp.(atf=200MHz),NF=1.8dBtyp.(atf=900MHz) •WithstandingtoESD;Buildin

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

BIC703M

BiasControlledMonolithicICVHF/UHFRFAmplifier

Features •BiasControlledMonolithicIC(NoexternalDCbiasingvoltageongate1.);Toreduceusingpartscost&PCboardspace. •High|yfs|;|yfs|=29mStyp.(f=1kHz) •Lownoise;NF=1.0dBtyp.(atf=200MHz),NF=1.8dBtyp.(atf=900MHz) •WithstandingtoESD;Buildin

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

CEB703AL

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

FEATURES ●30V,40A,RDS(ON)=17mΩ@VGS=10V. RDS(ON)=30mΩ@VGS=4.5V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandingcapability. ●Leadfreeproductisacquired. ​​​​​​​●TO-220&TO-263package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CEB703AL

N-ChannelEnhancementModeFieldEffectTransistor

CETChino-Excel Technology

华瑞华瑞股份有限公司

CED703AL

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,40A,RDS(ON)=19mΩ@VGS=10V. RDS(ON)=32mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CEP703AL

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

FEATURES ●30V,40A,RDS(ON)=17mΩ@VGS=10V. RDS(ON)=30mΩ@VGS=4.5V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandingcapability. ●Leadfreeproductisacquired. ​​​​​​​●TO-220&TO-263package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CEU703AL

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,40A,RDS(ON)=19mΩ@VGS=10V. RDS(ON)=32mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

详细参数

  • 型号:

    ASRD703B

  • 制造商:

    ASI

  • 制造商全称:

    ASI

  • 功能描述:

    GLASS PACKAGE STEP RECOVERY DIODE

供应商型号品牌批号封装库存备注价格
ASI
23+
原厂原包
19960
只做进口原装 终端工厂免费送样
询价
ASI
24+
NA
3500
原装现货,可开13%税票
询价
ASI
22+
原厂原封
8200
原装现货库存.价格优势!!
询价
ASI
24+
6500
原装现货,特价销售
询价
ASI
23+
SMD
5000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
询价
更多ASRD703B供应商 更新时间2025-6-1 15:01:00