ASRD703T

GLASS PACKAGE STEP RECOVERY DIODE

DESCRIPTION: TheASRD700SeriesofStepRecoveryDiodesareDesignedforGeneralPurposeVCOandSamplerApplications. FEATURESINCLUDE: •TransitionTimeasLowas70pS •HermeticGlassPackage

B703

XDSLSPLITTERFILTERMODULE

BIC703C

BiasControlledMonolithicICVHF/UHFRFAmplifier

Features •BiasControlledMonolithicIC(NoexternalDCbiasingvoltageongate1.);Toreduceusingpartscost&PCboardspace. •High|yfs|;|yfs|=29mStyp.(f=1kHz) •Lownoise;NF=1.0dBtyp.(atf=200MHz),NF=1.8dBtyp.(atf=900MHz) •WithstandingtoESD;Buildin

BIC703M

BiasControlledMonolithicICVHF/UHFRFAmplifier

Features •BiasControlledMonolithicIC(NoexternalDCbiasingvoltageongate1.);Toreduceusingpartscost&PCboardspace. •High|yfs|;|yfs|=29mStyp.(f=1kHz) •Lownoise;NF=1.0dBtyp.(atf=200MHz),NF=1.8dBtyp.(atf=900MHz) •WithstandingtoESD;Buildin

CEB703AL

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

FEATURES ●30V,40A,RDS(ON)=17mΩ@VGS=10V. RDS(ON)=30mΩ@VGS=4.5V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandingcapability. ●Leadfreeproductisacquired. ​​​​​​​●TO-220&TO-263package.

CEB703AL

N-ChannelEnhancementModeFieldEffectTransistor

CED703AL

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,40A,RDS(ON)=19mΩ@VGS=10V. RDS(ON)=32mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CEP703AL

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

FEATURES ●30V,40A,RDS(ON)=17mΩ@VGS=10V. RDS(ON)=30mΩ@VGS=4.5V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandingcapability. ●Leadfreeproductisacquired. ​​​​​​​●TO-220&TO-263package.

CEU703AL

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,40A,RDS(ON)=19mΩ@VGS=10V. RDS(ON)=32mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CHM703ALPAPT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE30VoltsCURRENT40Ampere FEATURE *Smallpackage.(TO-252A) *SuperhighdensecelldesignforextremelylowRDS(ON). *Highpowerandcurrenthandingcapability. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.