SURFACE-MOUNT POWER INDUCTORS

文件：842.43 Kbytes 页数：2 Pages

ABRACON

Sales Outline Drawing

文件：106.62 Kbytes 页数：1 Pages

MSPI

马洛里

Sales Outline Drawing

文件：117 Kbytes 页数：1 Pages

MSPI

马洛里

N-channel dual-gate MOS-FETs

DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1109, BF1109R and BF1109WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package

文件：145.4 Kbytes 页数：16 Pages

PHI

飞利浦