ATS635LSETN-T

ProgrammableBackBiasedHall-EffectSwitchwithTPOSFunctionality

FEATURES ChopperStabilization Extremelylowswitch-pointdriftovertemperature On-chipProtection Supplytransientprotection Outputshort-circuitprotection Reverse-batteryprotection TrueZero-SpeedOperation TruePower-OnState Single-chipSensingICforHighReliability O

AXLGS635F

Langasite(LGS)SMDCrystalResonatorUnit

BB635-PE-XX-G-TR

BOARDTOBOARDSOCKET

BC635

TECHNICALSPECIFICATIONSOFNPNEPITAXIALPLANARTRANSISTOR

Description Designedforgeneralpurposeswitchingandamplifierapplications.

BC635

NPNEPITAXIALSILICONTRANSISTOR

SwitchingandAmplifierApplications •ComplementtoBC636/638/640

BC635

NPNSiliconAFTransistors(HighcurrentgainHighcollectorcurrent)

NPNSiliconAFTransistors ●Highcurrentgain ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BC636,BC638,BC640(PNP)

BC635

NPNmediumpowertransistors

DESCRIPTION NPNtransistorinaTO-92;SOT54plasticpackage. PNPcomplements:BC636,BC638andBC640. FEATURES •Highcurrent(max.1A) •Lowvoltage(max.80V). APPLICATIONS •Driverstagesofaudio/videoamplifiers.

BC635

HighCurrentTransistors

HighCurrentTransistors NPNSilicon

BC635

COMPLEMENTARYSILICONTRANSISTORS

BC635

NPNTypePlasticEncapsulatedTransistor

FEATURE Highcurrenttransistor