NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI TPV591 is a Common Emitter Device Designed for High Linearity Class A Television Band IV and V Transmitters. FEATURES INCLUDE: • Gold Metalization • Emitter Ballasting

文件：23.94 Kbytes 页数：2 Pages

ASI

NPN SILICON RF POWER TRANSISTOR

ASI Semiconductor

Band-switching diode

DESCRIPTION The BA591 is a planar, high performance band-switching diode in the very small SOD323 SMD plastic package. FEATURES • Very small plastic SMD package • Low diode capacitance: max. 1.05 pF • Low diode forward resistance: max. 0.7 Ω • Small inductance. APPLICATIONS • Low loss band

文件：52.9 Kbytes 页数：8 Pages

PHI

飞利浦

Band-switching diode

Features ● Very small plastic SMD package ● Low diode capacitance:max. 1.05 pF ● Low diode forward resistance:max. 0.7 Ω ● Small inductance.

文件：34.65 Kbytes 页数：1 Pages

KEXIN

科信电子