NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI UTV200 is Designed for Class A. UHF Television Applications up to 860 MHz. FEATURES INCLUDE: • Internal Input Matching • Gold Metalization • Emitter Ballasting

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ASI

NPN SILICON RF POWER TRANSISTOR

ASI Semiconductor

HIGH POWER SWITCHING USE INSULATED TYPE

HIGH POWER SWITCHING USE INSULATED TYPE • IC Collector current ........................ 200A • VCEX Collector-emitter voltage ........... 600V • hFE DC current gain............................... 75 • Insulated Type • UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION

文件：71.73 Kbytes 页数：5 Pages

MITSUBISHI

三菱电机

HIGH POWER SWITCHING USE NON-INSULATED TYPE

HIGH POWER SWITCHING USE NON-INSULATED TYPE • IC Collector current ........................ 200A • VCEX Collector-emitter voltage ........... 350V • hFE DC current gain............................. 100 • Non-Insulated Type APPLICATION Robotics, Welders, Forklifts, Golf cart

文件：72.75 Kbytes 页数：5 Pages

MITSUBISHI

三菱电机

HIGH POWER GENERAL USE INSULATED TYPE

HIGH POWER GENERAL USE INSULATED TYPE • IT (AV) Average on-state current .......... 200A • IF (AV) Average forward current .......... 200A • VRRM Repetitive peak reverse voltage .......... 400/800/1200/1600V • VDRM Repetitive peak off-state voltage .......... 400/800/1200/1600V • MIX DOUBLE A

文件：62.27 Kbytes 页数：4 Pages

MITSUBISHI

三菱电机