NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI 2302 is Designed for General purpose Class C Power Amplifier Applications up to 3000 MHz. FEATURES: • PG = 9.5 dB min. at 2 W / 2300 MHz • Hermetic Microstrip Package • Omnigold™ Metalization System

文件：18.25 Kbytes 页数：1 Pages

ASI

NPN SILICON RF POWER TRANSISTOR

ASI Semiconductor

Silicon NPN Transistor Color TV Horizontal Deflection Output w/Damper Diode

Features: • High Breakdown Voltage and High Reliability • High Switching Speed • Capable of Being Mounted in a Variety of Methods

文件：21.35 Kbytes 页数：2 Pages

NTE

BROADBAND LINEAR VARIABLE GAIN AMPLIFIER

Product Description The RF2302 is a broadband linear variable gain amplifier that was designed specifically for digital communications systems that require linear amplification over a wide gain control range. It is suitable for use in CDMA or TDMA systems in the cellular or PCS band, in DAMPS sys

文件：164.21 Kbytes 页数：8 Pages

RFMD

威讯联合

N-channel enhancement mode field-effect transistor

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: SI2302DS in SOT23. Features TrenchMOS™ technology Very fast switching Logic level compatible Subminiature surface mount package.

文件：257.32 Kbytes 页数：12 Pages

PHI

PHI