NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI 2304 is Designed for General Purpose Class C Power Amplifier Applications up tp 3000 MHz. FEATURES: • PG = 9.5 dB min. at 4 W / 2300 MHz • Hermetic Microstrip Package • Omnigold™ Metalization System

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ASI

NPN SILICON RF POWER TRANSISTOR

ASI Semiconductor

Silicon NPN Transistor High Current, High Speed Switch (Compl to NTE2314)

Description: The NTE2304 is a silicon NPN transistor in a TO3P type package. Typical applications include relay drivers, high–speed inverters, converters, and other general high–current switching applications. Features: • Low Collector–Emitter Saturation Voltage • Wide ASO and Resist

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NTE

N-channel enhancement mode field-effect transistor

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology Product availability: SI2304DS in SOT23. Features ■ TrenchMOS™ technology ■ Very fast switching ■ Subminiature surface mount package. Applications ■ Battery management

文件：270.85 Kbytes 页数：12 Pages

PHI

PHI

DC- 20 GHz SP4T PIN Switch

Description The TriQuint TGS2304-SCC is a GaAs monolithic PIN-diode single-pole, four-throw switch, in chip form, that operates from DC to 20 GHz. Each arm consists of one series and two shunt PIN diodes. At a bias current of 10 mA per RF output arm, typical midband insertion loss is 0.6 dB; midb

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TRIQUINT