NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI 3003 is Designed for General Purpose Class C Power Amplifier Applications up to 3500 MHz. FEATURES: • PG = 5 dB min. at 3 W / 3,000 MHz • Hermetic Microstrip Package • Omnigold™ Metalization System

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ASI

NPN SILICON RF POWER TRANSISTOR

ASI Semiconductor

Thyratrons

Description Thyratrons are fast acting high voltage switches suitable for a variety of applications including radar, laser and scientific use. PerkinElmer’s thyratrons are constructed of ceramic and metal for strength and long life. Over 300 thyratron types are available from PerkinElmer. The t

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PERKINELMER

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Power Transistors . . . designed primarily for large–signal output and driver amplifier stages in the 1.5 to 3.0 GHz frequency range. • Designed for Class B or C, Common Base Linear Power Amplifiers • Specified 28 Volt, 3.0 GHz Characteristics: Output Power — 1.0 to 5

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MOTOROLA

摩托罗拉

HIGH FREQUENCY SECONDARY RECTIFIER

DESCRIPTION Dual center tap Fast Recovery Epitaxial Diodes suited for Switch Mode Power Supply and high frequency DC to DC converters. Packaged in TO-247 this device is intended for secondary rectification. FEATURES AND BENEFITS ■ COMBINES HIGHEST RECOVERY AND REVERSE VOLTAGE PERFORMANCE ■ UL

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STMICROELECTRONICS

意法半导体