NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI 3000 is Designed for General Purpose Class C Power Amplifier Applications up to 3500 MHz. FEATURES: • PG = 7 dB min. at 0.5 W / 3,000 MHz • Hermetic Microstrip Package • Omnigold™ Metalization System

文件：18.22 Kbytes 页数：1 Pages

ASI

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI 3001 is Designed for General Purpose Class C Power Amplifier Applications up to 3500 MHz. FEATURES: • PG = 7 dB min. at 1.0 W / 3,000 MHz • Hermetic Microstrip Package • Omnigold™ Metalization System

文件：18.19 Kbytes 页数：1 Pages

ASI

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI 3003 is Designed for General Purpose Class C Power Amplifier Applications up to 3500 MHz. FEATURES: • PG = 5 dB min. at 3 W / 3,000 MHz • Hermetic Microstrip Package • Omnigold™ Metalization System

文件：18.17 Kbytes 页数：1 Pages

ASI

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The is Designed for General Purpose Class C Power Amplifier Applications up to 3500 MHz. FEATURES: • PG = 4.5 dB min. at 5 W / 3,000 MHz • Hermetic Microstrip Package • Omnigold™ Metalization System

文件：18.31 Kbytes 页数：1 Pages

ASI

NPN SILICON RF POWER TRANSISTOR

ASI Semiconductor

NPN SILICON RF POWER TRANSISTOR

ASI Semiconductor

NPN SILICON RF POWER TRANSISTOR

ASI Semiconductor