NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI 2010 is Designed for General Purpose Class C Power Amplifier Applications up to 2300 MHz. FEATURES: • PG = 5 dB min. at 10 W/ 2,000 MHz • Hermetic Microstrip Package • Omnigold™ Metalization System

文件：18.28 Kbytes 页数：1 Pages

ASI

NPN SILICON RF POWER TRANSISTOR

ASI Semiconductor

COMPENSATED PRESSURE SENSOR

文件：91.75 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉

PLASTIC SILICON RECTIFIER(VOLTAGE 50 to 1000 Volts CURRENT - 2.0 Amperes)

VOLTAGE 50 to 1000 Volts CURRENT - 2.0 Amperes FEATURES • Low cost • High current capability • Plastic package has Underwriters Laboratories Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • 2.0 ampere operation at TA = 55°C with no thermal runawa

文件：44.27 Kbytes 页数：2 Pages

PANJIT

強茂

POWER RECTIFIERS(20A,50-200V)

Switchmode Full Plastic Dual Ultrafast Power Rectifiers Designed for use in switching power supplies, inverters and as free wheeling diodes. These state-of-the-art devices have the following features: ✱ High Surge Capacity ✱ Low Power Loss, High Efficiency ✱ Glass Passivated chip junction

文件：144.83 Kbytes 页数：1 Pages

MOSPEC

统懋