ASI10580

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: TheASICBSL6isagoldmetalizedepitaxialsiliconNPNtransistor,designedforhighlinearityClass-ABcellularbasestationapplications.ItalsooperatesinClass-C. FEATURES: •InternalInputMatchingNetwork •850-960MHz •PG=10dBat6.0W/960MHz •Omnigold™Metalizati

ASI10581

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: TheASICBSL15isDesignedforClassAB,CellularBaseStationApplicationsupto960MHz. FEATURES: •InternalInputMatchingNetwork •PG=8.0dBat15W/960MHz •Omnigold™MetalizationSystem

ASI10582

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: TheASICBSL30isagoldmetalizedepitaxialsiliconNPNtransistor,usingdiffusedballastresistorsforhighlinearityCalss-ABoperationforcellularbasestationapplication. FEATURES: •InternalInputMatchingNetwork •PG=7.5dBat30W/960MHz •Omnigold™MetalizationSys

ASI10583

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: TheASICBSL30BisDesignedforClassAB,CellularBaseStationApplicationsupto960MHz. FEATURES: •InternalInputMatchingNetwork •PG=7.5dBat30W/960MHz •Omnigold™MetalizationSystem

ASI10584

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: TheASICBSL60BisDesignedforClassAB,CellularBaseStationApplicationsupto960MHz. FEATURES: •InternalInput/OutputMatchingNetworks •PG=8.5dBat60W/960MHz •Omnigold™MetalizationSystem

ASI10585

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: TheASICBSL100isDesignedforClassAB,CellularBaseStationApplicationsupto960MHz. FEATURES: •InternalInput/OutputMatchingNetwork •PG=9.0dBat100W/960MHz •Omnigold™MetalizationSystem

ASI10586

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: TheASICBSL150isDesignedfor900MHzClassABCellularBaseStationAmplifiers. FEATURES: •InternalInput/OutputMatching •PG=9.0dBTyp.at150W/900MHz •Omnigold™MetalizationSystem

ASI10587

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: TheASIFMB075isDesignedfor FEATURES: ●Omnigold™MetalizationSystem

ASI10588

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: TheASIFMB150isDesignedfor FEATURES: •Omnigold™MetalizationSystem

ASI10589

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: TheASIFMB175isDesignedforClassC,FMBroadcastApplicationsupto108MHz. FEATURES: •ClassCOperation •PG=10dBat175W/108MHz •Omnigold™MetalizationSystem

ASI10590

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: TheASIHF5-12FisDesignedforbroadbandoperationincommercialandamateurcommunicationequipmentupto30MHz. FEATURES: •PG=20dBmin.at5W/30MHz •IMD3=-30dBcmax.at5.0W(PEP) •Omnigold™MetalizationSystem

ASI10591

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: TheASIHF5-12SisDesignedfor FEATURES: •PG=20dBmin.at5W/30MHz •IMD3=-30dBcmax.at5W(PEP) •Omnigold™MetalizationSystem

ASI10595

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: TheASIHF20-12SisDesignedfor12.5VClassAB&CHFPowerAmplifierApplicationsinthe2to32MHzBand. FEATURES: •PG=15dBmin.at20W/30MHz •IMD3=-30dBcmax.at20W(PEP) •Omnigold™MetalizationSystem •EmitterBallasting

ASI10596

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: TheASIHF50-12Fisa12.5VClassCepitaxialsiliconNPNtransistordesignedprimarilyforlandmobiletransmitterapplications.Thisdeviceutilizesemitterballasting,isextremelysuitableandcapableofwithstandinghighVSRWunderoperatingconditions. FEATURES: •PG=

ASI10597

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: TheASIHF50-12SisDesignedfor FEATURES: •PG=16dBmin.at50W/30MHz •IMD3=-30dBcmax.at50W(PEP) •Omnigold™MetalizationSystem

ASI10600

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: TheASIHF8-28FisDesignedfor FEATURES: •PG=21dBmin.at8W/30MHz •IMD3=-30dBcmax.at8W(PEP) •Omnigold™MetalizationSystem

ASI10601

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: TheASIHF8-28SisacommonEmittertransistor,designedforbroadbandamplifieroperationsinmilitary,commercialandamateurcommunicationequipment. FEATURES: •PG=21dBmin.at8W/30MHz •IMD3=-30dBcmax.at8W(PEP) •Omnigold™MetalizationSystem

ASI10602

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: TheASIHF15-28FisDesignedfor FEATURES: •PG=21dBmin.at15W/30MHz •IMD3=-30dBcmax.at15W(PEP) •Omnigold™MetalizationSystem

ASI10603

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: TheASIHF15-28SisDesignedfor FEATURES: •Omnigold™MetalizationSystem

ASI10604

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: TheASIHF30-28Fisa28VepitaxialRFNPNplanartransistordesignedprimarilyforSSBcommunications.Thedeviceutilizesemitterballastingforimprovedruggednessandreliability. FEATURES: •PG=18dBmin.at30W/30MHz •IMD3=-30dBcmax.at30W(PEP) •Omnigold™Metal