ASI09N40MQ数据手册市场行情马洛里MSPI-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
ASI09N40MQ	文件：80.95 Kbytes Page：1 Pages	May not be suitable for all Medical and Aerospace applications. ContactMallorySonalerttodiscussyourapplication.	MSPIMallory Sonalert Products Inc 马洛里马洛里索纳特产品有限公司	MSPI
ASI1001	文件：18.25 Kbytes Page：1 Pages	NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASI1001isDesignedforGeneralPurposeClassCPowerAmplifierApplicationsupto1500MHz. FEATURES: •PG=12dBmin.at1.0W/1,000MHz •HermeticMicrostripPackage •Omnigold™MetalizationSystem	ASI Advanced Semiconductor, Inc	ASI
ASI1002	文件：18.18 Kbytes Page：1 Pages	NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASI1002isDesignedforGeneralPurposeClassCPowerAmplifierApplicationsupto1500MHz. FEATURES: •PG=12dBminat2W/1,000MHz •HermeticMicrostripPackage •Omnigold™MetalizationSystem	ASI Advanced Semiconductor, Inc	ASI
ASI1005	文件：18.17 Kbytes Page：1 Pages	NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASI1005isDesignedforGeneralPurposeClassCPowerAmplifierApplicationsupto1500MHz. FEATURES: •PG=12dBminat5W/1,000MHz •HermeticMicrostripPackage •Omnigold™MetalizationSystem	ASI Advanced Semiconductor, Inc	ASI
ASI1010	文件：18.15 Kbytes Page：1 Pages	NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASI1010isDesignedforGeneralPurposeClassCPowerAmplifierApplicationsupto1500MHz. FEATURES: •PG=12dBmin.at10W/1,000MHz •HermeticMicrostripPackage •Omnigold™MetalizationSystem	ASI Advanced Semiconductor, Inc	ASI
ASI1020	文件：18.31 Kbytes Page：1 Pages	NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASI1020isDesignedforGeneralPurposeClassCPowerAmplifierApplicationsupto1500MHz. FEATURES: •PG=10dBmin.at20W/1,000MHz •HermeticMicrostripPackage •Omnigold™MetalizationSystem	ASI Advanced Semiconductor, Inc	ASI
ASI10466	文件：20.74 Kbytes Page：1 Pages	NPN RF POWER TRANSISTOR DESCRIPTION: TheASIHF220-50FisaCommonEmitterDeviceDesignedforSSBTransmitterApplicationsinthe2to30MHzBand. FEATURESINCLUDE: •PG=13dBmin.@30MHz •GoldMetallization •EmitterBallasting	ASI Advanced Semiconductor, Inc	ASI
ASI10467	文件：12.72 Kbytes Page：1 Pages	NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASIMRF427isDesignedforhighvoltageapplicationsupto30MHz FEATURES: •PG=18dBmin.at25W/30MHz •IMD3=-34dBcmax.at25W(PEP) •Omnigold™MetalizationSystem	ASI Advanced Semiconductor, Inc	ASI
ASI10493	文件：23.68 Kbytes Page：1 Pages	NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASIBLV33FisDesignedforOperationinBandIIITVTransposersandTransmitterAmplifiersfrom170to230MHz. FEATURES: •GoldMetalization •InternalInputMatching •Omnigold™MetalizationSystem	ASI Advanced Semiconductor, Inc	ASI
ASI10494	文件：22.21 Kbytes Page：1 Pages	NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASIUMIL20isaCommonEmitterDeviceDesignedforClassA,ABandCAmplifierApplicationsinthe225to400MHzMilitaryCommunicationsBand. FEATURES: •DirectReplacementforMRF323 •PG=12dBTypicalat400MHz •Omnigold™MetalizationSystem	ASI Advanced Semiconductor, Inc	ASI
ASI10510	文件：17.43 Kbytes Page：1 Pages	NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASIALR006isDesignedfor FEATURES: ●InputMatchingNetwork ●Omnigold™MetalizationSystem	ASI Advanced Semiconductor, Inc	ASI
ASI10511	文件：17.51 Kbytes Page：1 Pages	NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASIALR015isanNPNsiliconbipolartransistordesignedforL-Bandpulsedradarapplications.ItutilizesinternalmatchingandgoldmetalizationforhighreliabilityandgoodVSWRcapability. FEATURES: •1.2to1.4GHzoperation •InternalInput/OutputMatchingNet	ASI Advanced Semiconductor, Inc	ASI
ASI10512	文件：17.47 Kbytes Page：1 Pages	NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASIALR030isDesignedfor1200–1400MHz,L-BandApplications. FEATURES: •InternalInput/OutputMatchingNetwork •PG=7.0dBat30W/1400MHz •Omnigold™MetalizationSystem	ASI Advanced Semiconductor, Inc	ASI
ASI10513	文件：17.4 Kbytes Page：1 Pages	NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASIALR060isDesignedfor1200–1400MHz,L-BandApplications. FEATURES: •InternalInput/OutputMatchingNetwork •PG=6.5dBat60W/1400MHz •Omnigold™MetalizationSystem	ASI Advanced Semiconductor, Inc	ASI
ASI10514	文件：17.7 Kbytes Page：1 Pages	NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASIALR100isDesignedfor1200–1400MHz,L-BandApplications. FEATURES: •InternalInput/OutputMatchingNetwork •PG=6.0dBat100W/1400MHz •Omnigold™MetalizationSystem	ASI Advanced Semiconductor, Inc	ASI
ASI10515	文件：17.71 Kbytes Page：1 Pages	NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASIALR200isDesignedfor1200–1400MHz,L-BandApplications. FEATURES: •InternalInput/OutputMatchingNetwork •PG=7.0dBat200W/1400MHz •Omnigold™MetalizationSystem	ASI Advanced Semiconductor, Inc	ASI
ASI10516	文件：17.67 Kbytes Page：1 Pages	NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASIALR325isDesignedfor1200–1400MHz,L-BandApplications. FEATURES: •InternalInput/OutputMatchingNetwork •PG=6.5dbat325W/1400MHz •Omnigold™MetalizationSystem	ASI Advanced Semiconductor, Inc	ASI
ASI10517	文件：17.09 Kbytes Page：1 Pages	NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASIASAT10isDesignedforGeneralPurposeClassCOperationsupto1.7GHz. FEATURES: •InternalInputMatchingNetwork •PG=11dBat10W/1.7GHz •Omnigold™MetalizationSystem	ASI Advanced Semiconductor, Inc	ASI
ASI10518	文件：17.06 Kbytes Page：1 Pages	NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASIASAT15isDesignedforGeneralPurposeClassOperationsupto1.7GHz. FEATURES: •IntenalInputMatchingNetwork •PG=9.2dBat15W/1.7GHz •Omnigold™MetalizationSystem	ASI Advanced Semiconductor, Inc	ASI
ASI10519	文件：17.09 Kbytes Page：1 Pages	NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASIASAT20isDesignedforGenralPurposeClassCOperationupto1.7GHz. FEATURES: •InternalInputMatchingNetwork •PG=8.0dBat20W/1.7GHz •Omnigold™MetalizationSystem/NitridePassivation •CommonBaseClassC	ASI Advanced Semiconductor, Inc	ASI

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市莱克讯科技有限公司	ASI-0EU86	ASI	2017+	CSOP28	21455	深圳代理原装现货进口库存(香港-日本-台湾)开17点增票	询价
深圳市凌旭科技有限公司	ASI-0EU86	ASI	21+	CSOP28	1574		询价
深圳芯力源电子科技有限公司	ASI0EU86883C	ASI	23+	原厂封装	5177	现货	询价
深圳市壹芯创科技有限公司	ASI1	N/A	22+	BGA	8200	原装现货库存.价格优势!!	询价
深圳市永贝尔科技有限公司	ASI1001	ASI	23+	原厂原包	19960	只做进口原装终端工厂免费送样	询价
深圳科宇泰科技有限公司	ASI1010	ASI	21+	标准封装	27000	进口原装,优势专营品牌!	询价

更多ASI供应商更新时间2024-5-17 16:57:00

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