NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI 1010 is Designed for General Purpose Class C Power Amplifier Applications up to 1500 MHz. FEATURES: • PG = 12 dB min. at 10 W/ 1,000 MHz • Hermetic Microstrip Package • Omnigold™ Metalization System

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ASI

NPN SILICON RF POWER TRANSISTOR

ASI Semiconductor

Molded SMD Power Inductor

Features • PPAP ready and supported • TS16949 certified production lines • AEC-Q200 Grade 0 qualified (-55˚C ~ +155˚C) • Shielded construction • Soft saturation • Low DCR, High Efficiency Applications • Body electronics and comfort system • Infotainment and entertainment • Electric veh

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ABRACON

Swing Panel Kit incl. Panel

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FIBOX

菲宝斯

High Power Fixed Attenuators (Radiator built-in)

High Power Fixed Attenuators (Radiator built-in) ■Features 1.Small Size and Economical Beryllia is used for the material of the resistance element to enable the termination to be of small size and low cost. 2.Connectors Used In the coupling portion, the AT-1000 Series has an SMA t

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HIROSEHirose Electric Company

广濑日本广濑电机株式会社