SMD Schottky Barrier Diode

Features IO = 200mA VR = 30V - Designed for mounting on small surface. - Extremely thin package. - Low drop-down voltage. - Majority carrier conduction - Lead-free device Mechanical Data - Case :0603(1608) 1005(2512) standard package, molded plastic. - Terminals : Gold plated, sold

文件：143.43 Kbytes 页数：3 Pages

ANACHIP

易亨电子

SMD Schottky Barrier Diode

Diodes

美台半导体

N-Channel MOSFET uses advanced trench technology

文件：1.19922 Mbytes 页数：4 Pages

DOINGTER

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SMD Schottky Barrier Diode

Io = 200 mA VR = 30 Volts Features Low forward voltage. Designed for mounting on small surface. Extremely thin / leadless package. Majority carrier conduction. Mechanical data Case: 0503(1308) standard package, molded plastic. Terminals: Gold plated, solderable per MIL-S

文件：203.05 Kbytes 页数：4 Pages

COMCHIP

典琦

SMD Schottky Barrier Diode

Io = 200 mA VR = 30 Volts RoHS Device Halogen Free Features - Low forward voltage. - Designed for mounting on small surface. - Extremely thin/leadless package. - Majority carrier conduction. Mechanical data - Case: 0503/SOD-723F standard package, molded plastic. - Terminals: Gold plated

文件：203.23 Kbytes 页数：4 Pages

COMCHIP

典琦