N-Channel MOSFET uses advanced trench technology

文件：1.19922 Mbytes 页数：4 Pages

DOINGTER

杜因特

MOSFET

Bitek

硕颉科技

SMD Schottky Barrier Diode

Io = 200 mA VR = 30 Volts Features Low forward voltage. Designed for mounting on small surface. Extremely thin / leadless package. Majority carrier conduction. Mechanical data Case: 0503(1308) standard package, molded plastic. Terminals: Gold plated, solderable per MIL-S

文件：203.05 Kbytes 页数：4 Pages

COMCHIP

典琦

SMD Schottky Barrier Diode

Io = 200 mA VR = 30 Volts RoHS Device Halogen Free Features - Low forward voltage. - Designed for mounting on small surface. - Extremely thin/leadless package. - Majority carrier conduction. Mechanical data - Case: 0503/SOD-723F standard package, molded plastic. - Terminals: Gold plated

文件：203.23 Kbytes 页数：4 Pages

COMCHIP

典琦

SMD Schottky Barrier Diode

Io = 200 mA VR = 30 Volts Features Low reverse current. Designed for mounting on small surface. Extremely thin / leadless package. Majority carrier conduction. Mechanical data Case: 0503(1308) standard package, molded plastic. Terminals: Gold plated, solderable per MIL-S

文件：201.49 Kbytes 页数：4 Pages

COMCHIP

典琦