首页 >AS4C1M16E5>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
AS4C1M16E5 | 5V 1M횞16 CMOS DRAM (EDO) Functionaldescription TheAS4C1M16E5isahighperformance16-megabitCMOSDynamicRandomAccessMemory(DRAM)organizedas1,048,576words×16bits.ThedeviceisfabricatedusingadvancedCMOStechnologyandinnovativedesigntechniquesresultinginhighspeed,extremelylowpowerandwideop | ALSC Alliance Semiconductor Corporation | ALSC | |
5V 1M횞16 CMOS DRAM (EDO) Functionaldescription TheAS4C1M16E5isahighperformance16-megabitCMOSDynamicRandomAccessMemory(DRAM)organizedas1,048,576words×16bits.ThedeviceisfabricatedusingadvancedCMOStechnologyandinnovativedesigntechniquesresultinginhighspeed,extremelylowpowerandwideop | ALSC Alliance Semiconductor Corporation | ALSC | ||
5V 1M횞16 CMOS DRAM (EDO) Functionaldescription TheAS4C1M16E5isahighperformance16-megabitCMOSDynamicRandomAccessMemory(DRAM)organizedas1,048,576words×16bits.ThedeviceisfabricatedusingadvancedCMOStechnologyandinnovativedesigntechniquesresultinginhighspeed,extremelylowpowerandwideop | ALSC Alliance Semiconductor Corporation | ALSC | ||
5V 1M횞16 CMOS DRAM (EDO) Functionaldescription TheAS4C1M16E5isahighperformance16-megabitCMOSDynamicRandomAccessMemory(DRAM)organizedas1,048,576words×16bits.ThedeviceisfabricatedusingadvancedCMOStechnologyandinnovativedesigntechniquesresultinginhighspeed,extremelylowpowerandwideop | ALSC Alliance Semiconductor Corporation | ALSC | ||
5V 1M횞16 CMOS DRAM (EDO) Functionaldescription TheAS4C1M16E5isahighperformance16-megabitCMOSDynamicRandomAccessMemory(DRAM)organizedas1,048,576words×16bits.ThedeviceisfabricatedusingadvancedCMOStechnologyandinnovativedesigntechniquesresultinginhighspeed,extremelylowpowerandwideop | ALSC Alliance Semiconductor Corporation | ALSC | ||
5V 1M횞16 CMOS DRAM (EDO) Functionaldescription TheAS4C1M16E5isahighperformance16-megabitCMOSDynamicRandomAccessMemory(DRAM)organizedas1,048,576words×16bits.ThedeviceisfabricatedusingadvancedCMOStechnologyandinnovativedesigntechniquesresultinginhighspeed,extremelylowpowerandwideop | ALSC Alliance Semiconductor Corporation | ALSC | ||
5V 1M횞16 CMOS DRAM (EDO) Functionaldescription TheAS4C1M16E5isahighperformance16-megabitCMOSDynamicRandomAccessMemory(DRAM)organizedas1,048,576words×16bits.ThedeviceisfabricatedusingadvancedCMOStechnologyandinnovativedesigntechniquesresultinginhighspeed,extremelylowpowerandwideop | ALSC Alliance Semiconductor Corporation | ALSC | ||
5V 1M횞16 CMOS DRAM (EDO) Functionaldescription TheAS4C1M16E5isahighperformance16-megabitCMOSDynamicRandomAccessMemory(DRAM)organizedas1,048,576words×16bits.ThedeviceisfabricatedusingadvancedCMOStechnologyandinnovativedesigntechniquesresultinginhighspeed,extremelylowpowerandwideop | ALSC Alliance Semiconductor Corporation | ALSC | ||
5V 1M횞16 CMOS DRAM (EDO) Functionaldescription TheAS4C1M16E5isahighperformance16-megabitCMOSDynamicRandomAccessMemory(DRAM)organizedas1,048,576words×16bits.ThedeviceisfabricatedusingadvancedCMOStechnologyandinnovativedesigntechniquesresultinginhighspeed,extremelylowpowerandwideop | ALSC Alliance Semiconductor Corporation | ALSC | ||
5V 1M횞16 CMOS DRAM (EDO) Functionaldescription TheAS4C1M16E5isahighperformance16-megabitCMOSDynamicRandomAccessMemory(DRAM)organizedas1,048,576words×16bits.ThedeviceisfabricatedusingadvancedCMOStechnologyandinnovativedesigntechniquesresultinginhighspeed,extremelylowpowerandwideop | ALSC Alliance Semiconductor Corporation | ALSC | ||
5V 1M횞16 CMOS DRAM (EDO) Functionaldescription TheAS4C1M16E5isahighperformance16-megabitCMOSDynamicRandomAccessMemory(DRAM)organizedas1,048,576words×16bits.ThedeviceisfabricatedusingadvancedCMOStechnologyandinnovativedesigntechniquesresultinginhighspeed,extremelylowpowerandwideop | ALSC Alliance Semiconductor Corporation | ALSC | ||
EDODRAM GENERALDESCRIPTION The1Megx16isarandomlyaccessed,solid-statememorycontaining16,777,216bitsorganizedinax16configuration. FEATURES •JEDEC-andindustry-standardx16timing,functions,pinouts,andpackages •High-performanceCMOSsilicon-gateprocess •Singlepowersupply(+ | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | Micron |
详细参数
- 型号：
AS4C1M16E5
- 制造商：
ALSC
- 制造商全称：
Alliance Semiconductor Corporation
- 功能描述：
5V 1M×16 CMOS DRAM(EDO)
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ALSC |
23+ |
原厂原包 |
19960 |
只做进口原装 终端工厂免费送样 |
询价 | ||
ALLI |
23+ |
SOJ-42 |
7000 |
绝对全新原装!100%保质量特价!请放心订购! |
询价 | ||
ALLIANCE |
03+ |
TSOP44 |
3960 |
全新原装进口自己库存优势 |
询价 | ||
ALLIANCE |
2017+ |
SOJ |
25689 |
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票 |
询价 | ||
AS |
00+ |
SOJ |
942 |
询价 | |||
ALLIANCE |
23+ |
SOJ42 |
1248 |
询价 | |||
ALLIANCE |
2022 |
SOJ/42 |
2058 |
原厂原装正品,价格超越代理 |
询价 | ||
ALLIANC |
2020+ |
SOJ |
42 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
ALLIANCE |
2016+ |
TSOP42 |
9000 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
ALLIANSEMI |
16+ |
NA |
8800 |
原装现货,货真价优 |
询价 |
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