5V 1M횞16 CMOS DRAM (EDO)

Functional description The AS4C1M16E5 is a high performance 16-megabit CMOS Dynamic Random Access Memory (DRAM) organized as 1,048,576 words × 16 bits. The device is fabricated using advanced CMOS technology and innovative design techniques resulting in high speed, extremely low power and wide op

文件：603.53 Kbytes 页数：22 Pages

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5V 1M x 16 CMOS DRAM (EDO)

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5V 1M횞16 CMOS DRAM (EDO)

Functional description The AS4C1M16E5 is a high performance 16-megabit CMOS Dynamic Random Access Memory (DRAM) organized as 1,048,576 words × 16 bits. The device is fabricated using advanced CMOS technology and innovative design techniques resulting in high speed, extremely low power and wide op

文件：603.53 Kbytes 页数：22 Pages

ALSC

5V 1M횞16 CMOS DRAM (EDO)

Functional description The AS4C1M16E5 is a high performance 16-megabit CMOS Dynamic Random Access Memory (DRAM) organized as 1,048,576 words × 16 bits. The device is fabricated using advanced CMOS technology and innovative design techniques resulting in high speed, extremely low power and wide op

文件：603.53 Kbytes 页数：22 Pages

ALSC

5V 1M횞16 CMOS DRAM (EDO)

Functional description The AS4C1M16E5 is a high performance 16-megabit CMOS Dynamic Random Access Memory (DRAM) organized as 1,048,576 words × 16 bits. The device is fabricated using advanced CMOS technology and innovative design techniques resulting in high speed, extremely low power and wide op

文件：603.53 Kbytes 页数：22 Pages

ALSC

5V 1M횞16 CMOS DRAM (EDO)

Functional description The AS4C1M16E5 is a high performance 16-megabit CMOS Dynamic Random Access Memory (DRAM) organized as 1,048,576 words × 16 bits. The device is fabricated using advanced CMOS technology and innovative design techniques resulting in high speed, extremely low power and wide op

文件：603.53 Kbytes 页数：22 Pages

ALSC

5V 1M횞16 CMOS DRAM (EDO)

Functional description The AS4C1M16E5 is a high performance 16-megabit CMOS Dynamic Random Access Memory (DRAM) organized as 1,048,576 words × 16 bits. The device is fabricated using advanced CMOS technology and innovative design techniques resulting in high speed, extremely low power and wide op

文件：603.53 Kbytes 页数：22 Pages

ALSC

5V 1M횞16 CMOS DRAM (EDO)

Functional description The AS4C1M16E5 is a high performance 16-megabit CMOS Dynamic Random Access Memory (DRAM) organized as 1,048,576 words × 16 bits. The device is fabricated using advanced CMOS technology and innovative design techniques resulting in high speed, extremely low power and wide op

文件：603.53 Kbytes 页数：22 Pages

ALSC

5V 1M횞16 CMOS DRAM (EDO)

Functional description The AS4C1M16E5 is a high performance 16-megabit CMOS Dynamic Random Access Memory (DRAM) organized as 1,048,576 words × 16 bits. The device is fabricated using advanced CMOS technology and innovative design techniques resulting in high speed, extremely low power and wide op

文件：603.53 Kbytes 页数：22 Pages

ALSC

5V 1M횞16 CMOS DRAM (EDO)

Functional description The AS4C1M16E5 is a high performance 16-megabit CMOS Dynamic Random Access Memory (DRAM) organized as 1,048,576 words × 16 bits. The device is fabricated using advanced CMOS technology and innovative design techniques resulting in high speed, extremely low power and wide op

文件：603.53 Kbytes 页数：22 Pages

ALSC