AS4C256K16E0

5V 256Kx16 CMOS DRAM (EDO)

Functionaldescription TheAS4C256K16E0isahighperformance4megabitCMOSDynamicRandomAccessMemory(DRAM)organizedas262,144wordsby16bits.TheAS4C256K16E0isfabricatedwithadvancedCMOStechnologyanddesignedwithinnovativedesigntechniquesresultinginhighspeed,extremelylo

AS4C256K16E0-30

5V 256Kx16 CMOS DRAM (EDO)

Functionaldescription TheAS4C256K16E0isahighperformance4megabitCMOSDynamicRandomAccessMemory(DRAM)organizedas262,144wordsby16bits.TheAS4C256K16E0isfabricatedwithadvancedCMOStechnologyanddesignedwithinnovativedesigntechniquesresultinginhighspeed,extremelylo

AS4C256K16E0-30JC

5V 256Kx16 CMOS DRAM (EDO)

Functionaldescription TheAS4C256K16E0isahighperformance4megabitCMOSDynamicRandomAccessMemory(DRAM)organizedas262,144wordsby16bits.TheAS4C256K16E0isfabricatedwithadvancedCMOStechnologyanddesignedwithinnovativedesigntechniquesresultinginhighspeed,extremelylo

AS4C256K16E0-35

5V 256Kx16 CMOS DRAM (EDO)

Functionaldescription TheAS4C256K16E0isahighperformance4megabitCMOSDynamicRandomAccessMemory(DRAM)organizedas262,144wordsby16bits.TheAS4C256K16E0isfabricatedwithadvancedCMOStechnologyanddesignedwithinnovativedesigntechniquesresultinginhighspeed,extremelylo

AS4C256K16E0-35JC

5V 256Kx16 CMOS DRAM (EDO)

Functionaldescription TheAS4C256K16E0isahighperformance4megabitCMOSDynamicRandomAccessMemory(DRAM)organizedas262,144wordsby16bits.TheAS4C256K16E0isfabricatedwithadvancedCMOStechnologyanddesignedwithinnovativedesigntechniquesresultinginhighspeed,extremelylo

AS4C256K16E0-50

5V 256Kx16 CMOS DRAM (EDO)

Functionaldescription TheAS4C256K16E0isahighperformance4megabitCMOSDynamicRandomAccessMemory(DRAM)organizedas262,144wordsby16bits.TheAS4C256K16E0isfabricatedwithadvancedCMOStechnologyanddesignedwithinnovativedesigntechniquesresultinginhighspeed,extremelylo

AS4C256K16E0-50JC

5V 256Kx16 CMOS DRAM (EDO)

Functionaldescription TheAS4C256K16E0isahighperformance4megabitCMOSDynamicRandomAccessMemory(DRAM)organizedas262,144wordsby16bits.TheAS4C256K16E0isfabricatedwithadvancedCMOStechnologyanddesignedwithinnovativedesigntechniquesresultinginhighspeed,extremelylo

AS4C256K16E0-50TC

5V 256Kx16 CMOS DRAM (EDO)

Functionaldescription TheAS4C256K16E0isahighperformance4megabitCMOSDynamicRandomAccessMemory(DRAM)organizedas262,144wordsby16bits.TheAS4C256K16E0isfabricatedwithadvancedCMOStechnologyanddesignedwithinnovativedesigntechniquesresultinginhighspeed,extremelylo

AS4C256K16E0-35JC

5V 256K x 16 CM0S DRAM (EDO), 35ns RAS access time;

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