5V 256K X 16 CMOS DRAM (Fast Page Mode)

Functional description The AS4C256K16FO is a high-performance 4 megabit CMOS Dynamic Random Access Memory (DRAM) device organized as 262,144 words × 16 bits. The AS4C256K16FO is fabricated with advanced CMOS technology and designed with innovative design techniques resulting in high speed, extrem

文件：526.82 Kbytes 页数：25 Pages

ALSC

5V 256K X 16 CMOS DRAM (Fast Page Mode)

Functional description The AS4C256K16FO is a high-performance 4 megabit CMOS Dynamic Random Access Memory (DRAM) device organized as 262,144 words × 16 bits. The AS4C256K16FO is fabricated with advanced CMOS technology and designed with innovative design techniques resulting in high speed, extrem

文件：526.82 Kbytes 页数：25 Pages

ALSC

5V 256K X 16 CMOS DRAM (Fast Page Mode)

Functional description The AS4C256K16FO is a high-performance 4 megabit CMOS Dynamic Random Access Memory (DRAM) device organized as 262,144 words × 16 bits. The AS4C256K16FO is fabricated with advanced CMOS technology and designed with innovative design techniques resulting in high speed, extrem

文件：526.82 Kbytes 页数：25 Pages

ALSC

5V 256K X 16 CMOS DRAM (Fast Page Mode)

Functional description The AS4C256K16FO is a high-performance 4 megabit CMOS Dynamic Random Access Memory (DRAM) device organized as 262,144 words × 16 bits. The AS4C256K16FO is fabricated with advanced CMOS technology and designed with innovative design techniques resulting in high speed, extrem

文件：526.82 Kbytes 页数：25 Pages

ALSC

5V 256K X 16 CMOS DRAM (Fast Page Mode)

Functional description The AS4C256K16FO is a high-performance 4 megabit CMOS Dynamic Random Access Memory (DRAM) device organized as 262,144 words × 16 bits. The AS4C256K16FO is fabricated with advanced CMOS technology and designed with innovative design techniques resulting in high speed, extrem

文件：526.82 Kbytes 页数：25 Pages

ALSC

5V 256K x 16 CMOS DRAM (Fast page Mode)

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