丝印：ND；Package：U-DFN3030-8；1.8V, MICROPOWER CMOS ZERO-DRIFT OPERATIONAL AMPLIFIERS

Features • Low Input Offset Voltage: 8μV (typ) • Zero Drift: 0.02μV/°C (typ) • 0.01Hz to 10Hz Noise: 1.1μVPP • Low Quiescent Current: 12μA per Amplifier • Supply Voltage: 1.8V to 5.5V • Rail-to-Rail Input and Output • Bandwidth 350kHz • Slew Rate 0.12V/μs (typ) • MSOP-8, SO-8, and U-DFN30

文件：746.04 Kbytes 页数：16 Pages

DIODES

美台半导体

Silicon NPN Power Transistor for Switching Power Applications

Description: The NTE2333 is a silicon NPN Power Transistor in a TO220 package designed for use in 220V line–operated Switchmode Power supplies and electronic light ballasts. Features: • Improved Efficiency Due to Low Base Drive Requirements: High and Flat DC Current Gain hFE

文件：29.48 Kbytes 页数：3 Pages

NTE

GENERAL PURPOSE AMPLIFIER

Product Description The RF2333 is a general purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplifica

文件：84.83 Kbytes 页数：6 Pages

RFMD

威讯联合

GENERAL PURPOSE AMPLIFIER

Product Description The RF2333 is a general purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplifica

文件：84.83 Kbytes 页数：6 Pages

RFMD

威讯联合