丝印：AS2；Package：SC-62；NPN Darlington transistors

FEATURES •High current (max. 0.5 A) •Low voltage (max. 80 V) •Integrated diode and resistor. APPLICATIONS •Industrial switching applications such as: –Print hammer –Solenoid –Relay and lamp driving. DESCRIPTION NPN Darlington transistor in a SOT89 plastic package. PNP complements: BS

文件：329.19 Kbytes 页数：9 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：AS2；Package：SOT23；N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The DMN2053UQ is suitable for automotive applications requiring specific ch

文件：571.77 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：AS2；Package：SOT23；N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The DMN2053UQ is suitable for automotive applications requiring specific ch

文件：571.77 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：AS20MM1；Package：PG-TO263-7-HV-ND5.8；Final datasheet CoolSiC™ 1200 V SiC Trench MOSFET : Silicon Carbide MOSFET

Features • VDSS = 1200 V at Tvj = -55...175°C • IDDC = 104 A at TC = 25°C • RDS(on) = 19 mΩ at VGS = 20 V, Tvj = 25°C • New performance-optimized chip technology (Gen1p) with improved RDSon* A • Best in class switching energy for lower switching losses and reduced cooling efforts • Lowest de

文件：1.65862 Mbytes 页数：16 Pages

Infineon

英飞凌

丝印：AS2333；Package：MSOP-8；1.8V, MICROPOWER CMOS ZERO-DRIFT OPERATIONAL AMPLIFIERS

Features • Low Input Offset Voltage: 8μV (typ) • Zero Drift: 0.02μV/°C (typ) • 0.01Hz to 10Hz Noise: 1.1μVPP • Low Quiescent Current: 12μA per Amplifier • Supply Voltage: 1.8V to 5.5V • Rail-to-Rail Input and Output • Bandwidth 350kHz • Slew Rate 0.12V/μs (typ) • MSOP-8, SO-8, and U-DFN30

文件：746.04 Kbytes 页数：16 Pages

DIODES

美台半导体

丝印：AS2333；Package：SO-8；1.8V, MICROPOWER CMOS ZERO-DRIFT OPERATIONAL AMPLIFIERS

Features • Low Input Offset Voltage: 8μV (typ) • Zero Drift: 0.02μV/°C (typ) • 0.01Hz to 10Hz Noise: 1.1μVPP • Low Quiescent Current: 12μA per Amplifier • Supply Voltage: 1.8V to 5.5V • Rail-to-Rail Input and Output • Bandwidth 350kHz • Slew Rate 0.12V/μs (typ) • MSOP-8, SO-8, and U-DFN30

文件：746.04 Kbytes 页数：16 Pages

DIODES

美台半导体

丝印：AS2376Q；Package：SO-8；LOW-NOISE, LOW QUIESCENT CURRENT, PRECISION OPERATIONAL AMPLIFIER

Features - Low Noise: 9.5nV/ at 1kHz - 0.1Hz to 10Hz Noise: 0.8μVPP - Quiescent Current: 760μA (typical) - Low Offset Voltage: 5μV (typ) - Gain Bandwidth Product: 5.5MHz - Rail-to-Rail Input and Output - Single-Supply Operation - Supply Voltage: 2.2V to 5.5V - Totally Lead-Free & Fully Ro

文件：1.41885 Mbytes 页数：13 Pages

DIODES

美台半导体

丝印：AS244A；Package：SOIC；OCTAL BUFFERS AND LINE DRIVERS WITH 3-STATE OUTPUTS

• 3-State Outputs Drive Bus Lines or Buffer Memory Address Registers • pnp Inputs Reduce dc Loading • Package Options Include Plastic Small-Outline (DW) Packages, Ceramic Chip Carriers (FK), and Standard Plastic (N) and Ceramic (J) 300-mil DIPs description These octal buffers and line dr

文件：1.46297 Mbytes 页数：25 Pages

TI

德州仪器

丝印：AS244A；Package：SOIC；OCTAL BUFFERS AND LINE DRIVERS WITH 3-STATE OUTPUTS

• 3-State Outputs Drive Bus Lines or Buffer Memory Address Registers • pnp Inputs Reduce dc Loading • Package Options Include Plastic Small-Outline (DW) Packages, Ceramic Chip Carriers (FK), and Standard Plastic (N) and Ceramic (J) 300-mil DIPs description These octal buffers and line dr

文件：1.46297 Mbytes 页数：25 Pages

TI

德州仪器

丝印：AS245；Package：SOIC；OCTAL BUS TRANSCEIVERS WITH 3-STATE OUTPUTS

* 4.5-V to 5.5-V VCC Operation * Max tpd of 5.5 ns at 5 V * 3-State Outputs Drive Bus Lines Directly * pnp Inputs Reduce dc Loading

文件：1.45989 Mbytes 页数：24 Pages

TI

德州仪器